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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


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Q:Why do monocrystalline silicon chamfer? Polysilicon film?
Chamfering is for this purpose, grinding and polishing are also for this purpose. As a single crystal practitioners, it is recommended that you take a look at the processing technology of silicon single crystal wafer > this book, written by Zhang Juezong, more comprehensive
Q:The microprocessor integrates the computer with what is on a small silicon chip
The controller (English Name: controller) is a master device in accordance with the resistance change circuit wiring and a predetermined sequence change or control circuit to control the value of motor starting, speed control, braking and reverse.It consists of the program counter, the instruction register, the instruction decoder, the timing generator and the operation controller. It is the "decision making mechanism", which is to coordinate and direct the operation of the whole computer system.
Q:How to calculate the conversion efficiency of monocrystalline silicon
The algorithm is as follows:Solar cell efficiency = (open circuit voltage * short-circuit voltage * fill factor) / (battery area * light amplitude) *100%Light intensity - AM1.5 as the standard, that is 1000W/m2
Q:Why not use N type silicon crystal silicon battery
N type silicon wafer from the raw material price or quantity, and P type silicon wafer or some gap. This also led to the battery chip manufacturers for N battery has been in the laboratory stage, not mass production.Again, the P type battery is to take GA or boron, but the N type batteries into another material, I am not very clear, not engage in technology, huh, huh, huh, huh.The above information, I hope to help you.
Q:How to extract silicon from silicon wafers
Annealing: double position hot oxidation furnace after nitrogen purging, infrared heating to 300~500 DEG C, silicon wafer surface and oxygen react, so that the surface of silicon dioxide protection layer.
Q:What is a silicon wafer for unidirectional and bidirectional cutting? What is the difference between the two?
The cutting line is cut in one direction, and the wire is cut into the waste wire wheel from the discharge wheel
Q:After the completion of the silicon chip will appear in the shadow of the white spots or what is the situation? How to solve
Whether or not fully diluted before drying. I couldn't see the actual product.
Q:After cutting a few chips, mortar density is getting lower and lower
There are a lot of things that could happen1 lubricant is not qualified2 too many bubbles in the recycle bin3 mortar selection4, the operation speed is too fast5 wafer density is not uniform (the lowest possible)Try not to contact
Q:Solar silicon wafer cutting fluid can burn explosion?
Silicon in a weak base and water will slowly release hydrogen
Q:Silicon rod / wafer processing production
(4): end shoulder growth after a long thin neck, to reduce the temperature and casting speed, the crystal diameter gradually increased to the desired size. (5) the diameter growth: after a long neck and shoulder end, by continuously adjusting casting speed and temperature, the crystal diameter maintained at between 2mm positive and negative, the diameter of fixed part is called the diameter part. Monocrystalline silicon wafer from the equal diameter part. (6) tail growth: if the rod is separated from the liquid surface, the effect force will cause the dislocation and slip line of the crystal rod. So in order to avoid the occurrence of this problem, the diameter of the crystal rod must be gradually reduced until it is a sharp point and separated from the liquid surface. This process is called tail growth. After a long period of time, the crystal rod is taken out of the furnace chamber for cooling for a period of time to complete a growth cycle.

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