Amorphous silicon dice specification 2

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.

3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly

In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.

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Q:What is the harm of silicon chip into the fingers?
It is best to take out as soon as possible, otherwise easy to infection,
Q:Geometric parameters and testing of silicon wafer
Silicon chips have side length 125mm, 156mm, and 125 of the large chamfer diagonal 156mm and small chamfer diagonal 165mm, polycrystalline silicon chip to the side of the 156mm based, diagonal 219.2mm.
Q:Consult the difference between silicon and battery
Silicon wafer is generally refers to the silicon ingot with diamond wire or just cut into pieces,
Q:The significance of silicon wafer heat treatment
What will the resistivity change after heat treatmentBecause oxygen is the introduction of single crystal silicon at about 1400 DEG C, so the manufacturing process in general device temperature range (less than 1200 C), with the gap state of oxygen is in a saturated state, thermal cycling in the process of oxygen impurity in these devices due to the lower solid solubility will produce oxygen precipitation. Generally speaking, the higher the concentration of oxygen, the easier the oxygen precipitation is, the more oxygen precipitation is formed. On the contrary, the less oxygen precipitation. Especially when the oxygen concentration is less than a certain value (5 x 1017 / cm 3), the formation of oxygen precipitates is hardly observed.
Q:I would like to ask the solar cell (silicon) production process is the principle of how
Two, the surface of cashmereThe preparation of single crystal silicon wafer is the use of anisotropic etching of silicon on the surface of the silicon per square centimeter to form several million square pyramidal structure, namely, the Pyramid structure. Due to the multiple reflection and refraction of incident light on the surface, the absorption of light is increased, and the short circuit current and conversion efficiency are improved. Anisotropic etching of silicon in alkaline solution liquid is usually hot, available alkali sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc.. Most of them were prepared by using dilute sodium hydroxide solution with a concentration of about 1%, and the corrosion temperature was 70-85. In order to obtain a uniform texture, but also in the solution add alcohols such as ethanol and isopropanol as complexing agent to accelerate the corrosion of silicon. In the preparation of velvet, the silicon chip must be first surface corrosion, alkaline or acidic etching solution to about 20 ~ 25 m, corrosion in the face, the general chemical cleaning. After surface preparation of silicon wafers are not suitable for long-term storage in the water, in order to prevent contamination, should be spread as soon as possible.
Q:Is a wafer a silicon wafer and a wafer?
It is the raw material of the semiconductor industry, which is called silicon wafer after cutting
Q:Why integrated circuit electronic devices should be integrated on silicon
Another image, that is, the integrated circuit is a combination of some electronic components and wiring, no insulation and insulation as a support. It is achieved by adding bias and other techniques to isolate.And for why it's cheaper to use silicon, it's not because of its semiconductor nature that it uses it. The formation of P and N, a multi hole, a multi electron, and thus the role of different doping. GaAs expensive, but the performance is good, mostly for high-speed circuits and military aspects.
Q:How to do on the silicon wafer
2, wash, scrubWhen the need for deep cleaning if found on the surface of particles or not sure. Then you must first rinse, rinse off the particles and then scrub. Why scrub? Because the washing operation can only go out of the surface of floating dust particles. Especially particulate matter. The effect can be said to be very perfect. But there is a certain viscosity or due to the chemical reaction produced by pollutants is not very thorough. If the terms of the development of the passage of time will no longer be able to clean up these pollutants.
Q:The problem of integrated circuit fabrication is how to realize the functions of capacitors, resistors and transistors on a single chip
You connect the line in two holes on the silicon conductive layer in the middle, this is not a resistance capacitance resistance that integrated circuit in the senior middle school physics is not the kind of silicon wafer by resistance capacitance has made but I hope you can understand the function of course this is just the front-end integrated circuit
Q:What is a silicon wafer cutting edge material?
Online cutting process, the cutting fluid (usually polyethylene glycol) and cutting edge material sand spray with the fall in thin steel wire by thin steel wire net, high speed, make the mortar in cutting edge material and pressed online silicon rod or a silicon ingot surface high speed grinding,

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