Amorphous silicon dice specification 4

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


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Q:I grew Ag particles on a silicon wafer, about a few hundred nanometers in size
And then use the copper net fishing, so that particles attached to the copper network.
Q:There is a micro structure on the side of the silicon wafer
For solar cells destined to enter the market market (mass) products, the advantages of reserves is also one of the main reasons for the silicon photovoltaic materials.
Q:Wafer cutting will appear thick sheet, I would like to ask what the reasons are
Silicon wafer wire cutting will appear thick sheet, for the following reasons:1, the whole chip thickness:The A. guide slot is not uniform. Wafer thickness = slot steel wire diameter -4 times (SIC) D50, according to the requirements of wafer thickness required, you can calculate the best slot. In addition, because in the cutting process, steel wire wear, steel wire diameter decreases, and the port changed from round to oval, so the guide slot should be compensated according to the loss situation, to ensure the uniformity of wafer thickness.
Q:Why can silicon chips store information? Even if it is a miniature circuit, unplug the power will be no electricity
Storage of information is not a silicon chip, called memory, which is a transistor electronic components, called the silicon chip is made of silicon crystals directly on the transistor array,
Q:What to do with silicon. What is the relationship between the semiconductor and the PCB board
This problem may be more profound understanding of microelectronics.I am learning communication, simply say my understandingPure silicon wafer conductivity is relatively weak. But the incorporation of trivalent impurities or pentavalent after a carrier (free electrons or holes) and semiconductors. The electrical conductivity of semiconductors and the type of doping, the concentration and process. Knowledge of semiconductor doping analog electronic circuits on the textbook.
Q:Is a wafer a silicon wafer and a wafer?
An uncut monocrystalline silicon material is a thin wafer called a wafer
Q:I would like to ask what the purpose of the use of semiconductor silicon wafers, doped with boron ah?
PN junction has a single conductivity, semiconductor rectifier is made of the characteristics of the PN junction. Such as: large scale integrated circuit is under the high temperature for the impurity required in a certain way (thermal diffusion and ion implantation) incorporated into the silicon wafer surface layer, and make it reach the required quantity and distribution, manufacturing a PN junction, interconnect and ohmic contact to complete.
Q:After wafer cleaning, how to change the film?
Quality solutionCleaning method(a) RCA cleaning:RCA pioneered by Werner Kern in the N.J.Princeton RCA laboratory in 1965, and hence the name.RCA cleaning is a typical wet chemical cleaning.RCA cleaning is mainly used for cleaning the surface film, organic particles and metal contamination.1, particle cleaningThe main APM removal of silicon surface particles (also known as SC1) cleaning solution (NH4OH + H2O2 + H2O) to APM in the cleaning. The cleaning solution, due to the effects of H2O2, the silicon surface has a layer of natural oxide film (SiO2), a hydrophilic surface and between silicon particles can soaking cleaning liquid, silicon surface the natural oxide film and a silicon wafer surface by NH4OH corrosion, the particles will fall into the cleaning solution. The corrosion rate and the particle removal amount of silicon surface, for removing particles, corrosion must be a certain amount. In the cleaning solution, because the potential of silicon surface is negative, and most of the particles are repulsive force to prevent the adsorption of particles to the silicon surface.
Q:What is a silicon wafer cutting edge material?
Online cutting process, the cutting fluid (usually polyethylene glycol) and cutting edge material sand spray with the fall in thin steel wire by thin steel wire net, high speed, make the mortar in cutting edge material and pressed online silicon rod or a silicon ingot surface high speed grinding,
Q:Monocrystalline silicon processing technology
Most photovoltaic equipment suppliers buy chip wire. They generally grow silicon ingots or silicon blocks and process silicon materials into wafers, which are eventually sold to photovoltaic cell manufacturers for the production of batteries. The installed capacity of the industry's most successful application of B5 wire materials company HCT system more than 500 units, is a benchmark in the field of photovoltaic chip products.conclusionIn the field of photovoltaic technology, wire reduces wafer thickness and reduce the material loss in the cutting process, thereby reducing the power consumption of the solar silicon materials. (therefore, wire saw technology to reduce the cost per watt of solar energy and eventually to achieve grid parity has played a crucial role. The latest and most advanced wire technology brings a lot of innovation, improve the productivity and the thinner silicon wafers to reduce the consumption of silicon materials.

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