Solar Cell High Quality A Grade Cell Monorystalline 5v 17.2%

Solar Cell High Quality A Grade Cell Monorystalline 5v 17.2% System 1

Solar Cell High Quality A Grade Cell Monorystalline 5v 17.2%

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Loading Port:: Shanghai

Payment Terms:: TT OR LC

Min Order Qty:: 1000 pc

Supply Capability:: 100000 pc/month

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Specifications

hot sale solar cell
1.16.8%~18.25% high efficiency
2.100% checked quality
3.ISO9001/ISO14001/TUV/CE/UL
4.stable performance

We can offer you the best quality products and services, don't miss !

POLY6'(156*156)

Polycrystalline Silicon Solar cell

Physical Characteristics

Dimension: 156mm×156mm±0.5mm

Diagonal: 220mm±0.5mm

Thickness(Si): 200±20 μm

Front(-) Back(+)

Blue anti-reflecting coating (silicon nitride); Aluminum back surface field;

1.5mm wide bus bars; 2.0mm wide soldering pads;

Distance between bus bars: 51mm . Distance between bus bars :51mm .

Electrical Characteristics

Efficiency(%)	18.00	17.80	17.60	17.40	17.20	16.80	16.60	16.40	16.20	16.00	15.80	15.60
Pmpp(W)	4.33	4.29	4.24	4.19	4.14	4.09	4.04	3.99	3.94	3.90	3.86	3.82
Umpp(V)	0.530	0.527	0.524	0.521	0.518	0.516	0.514	0.511	0.509	0.506	0.503	0.501
Impp(A)	8.159	8.126	8.081	8.035	7.990	7.938	7.876	7.813	7.754	7.698	7.642	7.586
Uoc(V)	0.633	0.631	0.628	0.625	0.623	0.620	0.618	0.617	0.615	0.613	0.611	0.609
Isc(A)	8.709	8.677	8.629	8.578	8.531	8.478	8.419	8.356	8.289	8.220	8.151	8.083

Solar Cell High Quality A Grade Cell Monorystalline 5v 17.2%

MONO5'(125*125mm)165

Monocrystalline silicon solar cell

Physical Characteristics

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

Front(-) Back(+)

Blue anti-reflecting coating(silicon nitride); Aluminum back surface field;

1.6mmwide bus bars; 2.5mm wide soldering pads;

Distance between bus bars: 61mm . Distance between bus bars :61mm .

Electrical Characteristics

Efficiency(%)	19.40	19.20	19.00	18.80	18.60	18.40	18.20	18.00	17.80	17.60	17.40	17.20
Pmpp(W)	2.97	2.94	2.91	2.88	2.85	2.82	2.79	2.76	2.73	2.70	2.67	2.62
Umpp(V)	0.537	0.535	0.533	0.531	0.527	0.524	0.521	0.518	0.516	0.515	0.513	0.509
Impp(A)	5.531	5.495	5.460	5.424	5.408	5.382	5.355	5.328	5.291	5.243	5.195	4.147
Uoc(V)	0.637	0.637	0.636	0.635	0.633	0.630	0.629	0.629	0.628	0.626	0.626	0.625
Isc(A)	5.888	5.876	5.862	5.848	5.839	5.826	5.809	5.791	5.779	5.756	5.293	5.144

Solar Cell High Quality A Grade Cell Monorystalline 5v 17.2%

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

Q:How about your solar panel efficency?

A: Our product efficency around 17.25%~18.25%.

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL

Q:How is a conversion efficiency measured in a solar silicon wafer?: Conversion efficiency in a solar silicon wafer is typically measured by calculating the ratio of the electrical power output from the solar cell to the total solar power input. This is done by taking into account factors such as the amount of sunlight absorbed, the electrical losses within the cell, and any other losses in the system. The resulting percentage is an indicator of how effectively the solar wafer is converting sunlight into usable electrical energy.

Q:What is the typical reflectivity of a solar silicon wafer?: The typical reflectivity of a solar silicon wafer is around 30-35%.

Q:Why do they make so many transistors on silicon in an integrated circuit: This means that you do not understand the meaning of integrated circuitsI suggest you go online to see what is integrated circuit

Q:Are there any ongoing research efforts to enhance the efficiency of solar silicon wafers?: Yes, there are ongoing research efforts to enhance the efficiency of solar silicon wafers. Various techniques and technologies, such as surface texturing, passivation layers, and advanced cell architectures, are being explored to improve light absorption, reduce recombination losses, and increase overall conversion efficiency. Additionally, scientists are investigating new materials like perovskites and tandem solar cells to further enhance the performance of silicon wafers. Continuous research and development in this field aim to make solar energy more cost-effective and viable for widespread adoption.

Q:How thick is a solar silicon wafer typically?: A solar silicon wafer is typically around 200 micrometers to 300 micrometers thick.

Q:What is the typical production volume of solar silicon wafers?: The typical production volume of solar silicon wafers can vary greatly depending on the size and capabilities of the manufacturing facility. However, on average, a large-scale solar silicon wafer production facility can produce millions to billions of wafers annually.

Q:Can solar silicon wafers be used in solar-powered electric vehicle charging stations?: Yes, solar silicon wafers can be used in solar-powered electric vehicle charging stations. These wafers, which are made from high-purity silicon, are commonly used in the production of solar cells and panels. By incorporating solar silicon wafers into the design of charging stations, it is possible to harness solar energy and convert it into electricity to charge electric vehicles. This not only promotes renewable energy usage but also reduces the environmental impact of charging electric vehicles.

Q:What is the role of edge isolation in solar silicon wafers?: The role of edge isolation in solar silicon wafers is to prevent any electrical leakage or short circuits between the front and back surfaces of the wafer. By isolating the edges, it ensures that the current generated by the sunlight is channeled efficiently through the front surface and collected by the metal contacts on the back surface, resulting in improved solar cell performance and higher overall efficiency.

Q:What is the harm of silicon chip into the fingers?: The silicon rod into silicon wafer after printed, someone with bare hands touched the wafer, because the chemical composition of the finger is very complex, in the cleaning process is not removed, causing subsequent corrosion is not uniform, the more to the more obvious after section

Q:Why should the wafer cut side, cut out edge Jiaosha: In fact, early silicon is not cutting edge, but with the development of microelectronics industry began the following reasons: cutting edge, W2) i: J n$W% L* M1 s `&;1, n can do a plurality of microelectronic devices on the wafer, cut down, and there is a crystal to crystal growth requirements, cutting along a direction for cutting chaos crack, cleavage is the professional said. The cutting edge tells you the direction of cleavage.2, N type and P type silicon wafer, a standard trimming is also inform you that it is n type or P type electrical characteristics, electrical characteristics, u$J2 z/ h 9 - O3, microelectronics production has been automated, such as lithography exposure if there is no cutting edge positioning, then the mask plate and the chip will be a difference of 180 degrees or a certain location, production efficiency will be very low...,4, the use of a lot of silicon, in addition to n/p also have crystal direction, for example, do MEMS requires corrosion anisotropy will be used <110> crystal direction, and MOS products in order to reduce the influence of the surface state requirements with <100> crystal...

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