Solar Cell High Quality A Grade Cell Monorystalline 5v 19.2%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 19.2%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 19.2%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:Why the resistivity of silicon wafer is high and low
If the thermistor is more normal. For example, when you hold your hands
Q:Geometric parameters and testing of silicon wafer
Monocrystalline silicon chip has side length 125mm, 156mm, and 125 of the large diagonal diagonal 156mm and small chamfer diagonal 165mm,Polycrystalline silicon chip to the side of the main 156mm, diagonal 219.2mm.Wafer inspection the main test items are: side, diagonal, chamfer, thickness, TTV, line, chipping, cracks, warping, oil, resistivity, lifetime.
Q:1 megawatts of solar energy need how many wafers
1 WP silicon chip, which is 1000000WPDo not know what you want to know? Detailed point!
Q:The metal in the silicon wafer
The properties of silicon have excellent electrical properties. The band gap is moderate, and is 1.21 ev. Higher carrier mobility, the electron mobility is 1350 cm / sec / V /, hole mobility is 480 cm / sec / v. The resistivity at room temperature (300K) up to 2.3 x 10 - Europe - cm wide, doped resistivity can be controlled in 10 - to 10 - Europe - cm, can meet the needs of manufacturing various devices. The minority carrier lifetime of the single crystal silicon is longer than that in a few tens of microseconds to 1 milliseconds. Larger thermal conductivity. The chemical property is stable, and is easy to form a stable thermal oxidation film. It can be used to realize the surface passivation and protection of the PN junction in the fabrication of planar silicon devices, and the metal oxide semiconductor structure can be formed to produce MOS field effect transistors and integrated circuits. The properties of the PN junction has good characteristics, so that the silicon device has the advantages of high pressure, the reverse leakage current, high efficiency, long service life, good reliability, good heat conduction, and in the 200 - high temperature operation etc..
Q:Why do you use a concentrated sulfuric acid and hydrogen peroxide to wash silicon?
But it is best not to use, the use of water under normal conditions and these two kinds of things can be caustic clean silicon, 100% recycled mortar is not the problem, but this requires tens of thousands of cost and appropriate design, I am clean
Q:The process for steel wire cutting silicon factory, we use HCTB5 wire, you can do?
Mortar free multi wire cuttingMortar free type multi wire cutting, cutting and cutting sand coexist in the grinding fluid, resulting in low cutting efficiency; and the high viscosity of the coolant and cutting sand and high value of cutting raw materials mixed together, separation is difficult, resulting in the waste of raw materials and environmental pollution.Diamond wire cuttingThe preparation technology of diamond wire belongs to the technology of consolidation abrasive particles. Fixed abrasive wire cutting way between the consolidation in the wire on the abrasive and workpiece material cutting based on the principle of two body wear, abrasive particles directly on the workpiece, which belongs to a kind of rigid cutting method, greatly improves the cutting efficiency.
Q:The benefits of silicon chip
The silicon steel sheet (sheet) Grade 600 to 1300Use: tableware / Accessories / motor can container / air conditioning accessories / small appliance parts / Accessories / microwave / lighting hardware accessories / furniture fittingsHardware knowledge: xigangpianElectrical silicon steel sheet or silicon steel sheet or steel sheet. As the name suggests, it is a silicon containing up to 0.8%-4.8% of electrical silicon steel, made of hot, cold rolled. General thickness below 1mm, so called sheet. The silicon steel sheet is a kind of plate, which is independent of its special use.The silicon steel sheet used in electrical engineering has excellent electromagnetic properties and is an important magnetic material in electric power, telecommunication and instrument industry.
Q:What is the difference between silicon wafer P111 and P100
If the crystal is body centered cubic lattice, the crystal orientation through the cube on the diagonal atoms
Q:What is a silicon wafer for unidirectional and bidirectional cutting? What is the difference between the two?
Bidirectional cutting line cutting, (1) from the line wheel line network and enter the waste wire wheel (2) after a certain length reverse line wheel released by the waste reverse into the line network into the line wheel (3) repeat from the line wheel into the wire and into the process of waste wire wheelBut the length of 1 is greater than 2
Q:Silicon rod / wafer processing production
The monocrystalline silicon processed into silicon polished wafer processes: crystal growth, cutting, grinding, flat or rolling diameter V groove processing, chamfering, grinding slice polishing, cleaning, corrosion - Packaging: the purpose is to cut off the head and tail of the monocrystalline silicon removal and exceed customer specifications of the parts will be segmented into monocrystalline silicon slicing device can handle the length of cut specimen resistivity measurement of oxygen content in silicon rods. Cut off equipment: in the park outside the park by cutting or cutting machine mainly imported materials cutting machine: blade od grinding: because the surface diameter of the monocrystalline silicon and uneven diameter than the diameter specification final polishing wafer, the outer diameter of rolling mill can accurately obtain diameter. Outer diameter grinding equipment: grinding flat edge or V type groove processing: refers to the designated position and processing, with the specific direction of the crystal silicon on the flat side or V. Processing equipment: grinding machines and X - RAY diffractometer. Slice: a single crystal silicon rod is cut into a thin wafer with an exact geometric size.

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