Polycrystalline/ Multiple Solar Silicon Wafer156*156, Solar Wafers

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100 Pieces PCS
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700MW/Per Year PCS/month

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Product Description:

Specifications of Polycrystalline Silicon Wafer

Format : 156 mm × 156 mm ± 0.5 mm                                          

Thickness : 200μm ± 10 μm

Product name

 Poly Wafer
 Conductive type   P Type
Square size wafer (mm)

156×156±0.5 
219.20±0.5 
Corner (mm)

 

1±0.5、45°±10º 
200±20 
Total thickness(um)  ≤40 
Resistivity ranges(Ωcm)  1-3
Doping elements  boron
Carbon content(atoms/cc)  ≤8*1017
Oxygen content(atoms/cc)  ≤1*1018
 Lifetime(μs)  ≥2 
  Surface quality

No crack, gap, missing Angle, perforated, window, microcrystalline
Warping degrees(μm)  ≤50 
  Neighbouring vertical degree

90±0.5° 
Side damage(mm)      ≤0.5mm(length)×0.3mm(width),(not more than 2 per wafer)
Line mark(μm)  ≤15

 

Usage and Applications of Poly Wafers

Poly Solar Wafers mainly used in Poly Solar Cells, with high efficiency and reliable quality. Our Wafer can promise the 25 years life span and have passed PID test.

 

Packaging & Delivery of Poly Wafers

Carton Box Package and Deliver by air

 

Factory Picture of Poly Wafers

 

 

 Solar Wafers

 

Package Picture of Poly Wafers

 Solar Wafers

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Q:How is the silicon chip integrated circuit?
Description: the above process is only an example. The name of the process, in the name of different manufacturers have different. But roughly so. There are some differences between the process of MOS circuit and.
Q:What is a silicon wafer cutting edge material?
Online cutting process, the cutting fluid (usually polyethylene glycol) and cutting edge material sand spray with the fall in thin steel wire by thin steel wire net, high speed, make the mortar in cutting edge material and pressed online silicon rod or a silicon ingot surface high speed grinding,
Q:How much is the thickness of the silicon wafer
Around 0.670mm. Wafer must be thinned, otherwise the loss of dicing knife
Q:What are some of the silicon wafer factory
2 raw materials for deputy director, assistant director of the workshop material sorting and packaging materials packaging materials sorting operator monitor corrosion monitor cleaning cleaning raw materials warehousing operator member subtotal deputy director of the 3 crystal sandblasting operator workshop director assistant assistant statistician crystal crystal pulling monitor operator cut cut monitor operator subtotal
Q:I would like to ask what the purpose of the use of semiconductor silicon wafers, doped with boron ah?
PN junction has a single conductivity, semiconductor rectifier is made of the characteristics of the PN junction. Such as: large scale integrated circuit is under the high temperature for the impurity required in a certain way (thermal diffusion and ion implantation) incorporated into the silicon wafer surface layer, and make it reach the required quantity and distribution, manufacturing a PN junction, interconnect and ohmic contact to complete.
Q:What is the difference between silicon wafer P111 and P100
<111> is the coordinate of the direction vector<111> is expressed over the origin and point x = 1, y = 1, Z =1 on a straight line passing through the atom
Q:The metal in the silicon wafer
The properties of silicon have excellent electrical properties. The band gap is moderate, and is 1.21 ev. Higher carrier mobility, the electron mobility is 1350 cm / sec / V /, hole mobility is 480 cm / sec / v. The resistivity at room temperature (300K) up to 2.3 x 10 - Europe - cm wide, doped resistivity can be controlled in 10 - to 10 - Europe - cm, can meet the needs of manufacturing various devices. The minority carrier lifetime of the single crystal silicon is longer than that in a few tens of microseconds to 1 milliseconds. Larger thermal conductivity. The chemical property is stable, and is easy to form a stable thermal oxidation film. It can be used to realize the surface passivation and protection of the PN junction in the fabrication of planar silicon devices, and the metal oxide semiconductor structure can be formed to produce MOS field effect transistors and integrated circuits. The properties of the PN junction has good characteristics, so that the silicon device has the advantages of high pressure, the reverse leakage current, high efficiency, long service life, good reliability, good heat conduction, and in the 200 - high temperature operation etc..
Q:Light doped and heavily doped silicon wafers
Is divided into light heavy doping, which is related to the amount of doping
Q:The last time you gave me the answer to the silicon chip, I learned a lot
I'm sorry, I really know that. The composition of sapphire is alumina.This is the information I found on the Internet to help you.SapphireEnglish Name: sapphire.
Q:The meaning of various names
Crystal column ends can not be cut into available wafer parts can be called the head tail. Preliminary cutting out the wafer, usually can not be used as a rough surface, wafer production, and usually in the subsequent process of polishing, polishing the noun to which. According to the different requirements of wafer fabrication, usually need to rough wafer in doping some impurities, such as P, B and so on, to change its resistance, thus had low resistance, high resistance, heavily doped term coated can be understood as the extension of Epi, according to the specific requirements of the device semiconductor is made of wafer, is usually used in high-end IC and special IC, such as Si on insulator (SOI). In the production process of IC wafer
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