Amorphous silicon dice specification 6

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.

3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly

In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.

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Q:I would like to ask the solar cell (silicon) production process is the principle of how
Three, diffusion systemSolar cells require a large area of PN junction to achieve the conversion of light energy to electrical energy, while the diffusion furnace is a special equipment for manufacturing solar cell PN junction. Tube type diffusion furnace is mainly composed of quartz boat download four parts part, gas chamber, a furnace body part and a holder part etc.. Generally, the liquid source of three phosphorus oxychloride is used as the diffusion source. The P type silicon wafer is placed in a quartz tube of a tube type diffusion furnace, and three nitrogen oxychloride is used in the quartz vessel at the temperature of 850---900 degrees Celsius, and the phosphorus atom is obtained through the reaction of the phosphorus oxychloride and the silicon wafer through the reaction of the phosphorus and the phosphorus. After a certain time, the phosphorus atom from the surrounding surface layer into a silicon wafer, and wafer to internal diffusion through the void between the silicon atoms, forming a N type semiconductor and P type semiconductor interface, namely PN junction. The PN junction made by this method has good uniformity, the uniformity of box resistance is less than ten percent, and the lifetime of less than 10ms. The manufacture of PN junction is the most basic and most important process in the production of solar cells. Because it is the formation of PN junction, so that the electrons and holes in the flow is no longer back to the original place, so that the formation of the current, using the wire will lead to the current, dc.
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
Because monocrystalline silicon and the battery is not a quadrilateral, so the 125 refers to the length of a single crystal square
Q:How to make the photoresist and silicon substrate adhesion better
PR and the same solvent for the HMDS can be better combination, adhesion will be better, will not produce bubble. You can search the TOK OAP material. That's what it's supposed to be
Q:Why silicon wafers are made in watts!
Battery specifications good variety:103*103mm125*125mm150*150mm156*156mmThe longest seen is the single crystal 125*125mm polycrystalline 156*156mm according to the efficiency to determine the current efficiency of the battery chip is 16%--19%
Q:How to do on the silicon wafer
2, wash, scrubWhen the need for deep cleaning if found on the surface of particles or not sure. Then you must first rinse, rinse off the particles and then scrub. Why scrub? Because the washing operation can only go out of the surface of floating dust particles. Especially particulate matter. The effect can be said to be very perfect. But there is a certain viscosity or due to the chemical reaction produced by pollutants is not very thorough. If the terms of the development of the passage of time will no longer be able to clean up these pollutants.
Q:Hydrogen passivation mechanism of hydrogen fluoride HF in silicon wafer RCA cleaning process
Wire cut damage layer thickness of 10 microns.Generally use 20% alkali solution in the corrosion condition at 90 C
Q:After cutting a few chips, mortar density is getting lower and lower
PEG water absorption is very strong, as long as the air humidity is slightly higher, then did not cut the water content of a mortar on the rise, as well as the viscosity of mortar and mortar temperature is related to the temperature difference, the viscosity of mortar to a difference of about 10
Q:How to detect the surface finish of photovoltaic silicon wafers, what equipment?
Physical examination of the surface roughness on the line, whether it can be cleaned with chemical or optical
Q:What are the reasons for the phenomenon of monocrystalline silicon chip
Or storage time is too long, vacuum packaging problems, the outside world has the dust into the adsorption on the surface of silicon, this will happen. There is the central part of the polishing process, there is a problem of pressure, resulting in the removal of the center is not enough, the surface roughness is very poor, in the semiconductor level light irradiation, the center of the silicon will appear black.
Q:Consult the difference between silicon and battery
From the silicon wafer to the battery piece needs to undergo the process of making wool, and the single crystal silicon wafer is generally made of alkali. Therefore, the appearance of monocrystalline silicon battery is black, and the appearance of polycrystalline silicon sheet is dark blue.

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