Amorphous silicon dice specification 6

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.

3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly

In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.

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Q:The purpose and means of chemical etching of silicon wafers?
Corrosion is to create suede, was not intended to be clean, but cleaning agents will inevitably etch the surface damage layer of wafer line after cutting in the solar industry is a must, because it can produce suede.
Q:What is a silicon wafer for unidirectional and bidirectional cutting? What is the difference between the two?
One way and two way cutting of silicon wafer is the two way to cut silicon ingot by using solar energy cutting wire.When slicing machine uses solar cutting line to cut silicon ingot,
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
160 refers to the diagonal length of the chamfer, you draw a map can be calculated, the specific algorithm is:
Q:Manufacturers of solar wafers belong to the photovoltaic industry which specific industry classification below
Photovoltaic involves a lot, but the company makes silicon chips in terms of, so if the use of photovoltaic culvert cover, too general, I need a detailed classification of the industry, and then go to the specific industry analysis
Q:For solar wafer cutting diamond wire, what are the characteristics?
The diamond wire saw is referred to as diamond wire, diamond wire, are the different names of one thing, because it is the thread sawing, all wire - sometimes called is a steel wire electroplating a layer of diamond particles consolidation.
Q:Development trend of monocrystalline silicon wafer
Speaking of silicon, we have to mention Chinese LDK! The world's largest manufacturer of solar wafers - Jiangxi LDK LDK Solar Co. Ltd., announced in September 20, 2008, the company has been successful in the United States on a day before the issuance of 4 million 800 thousand shares of American Depositary Shares (ADS), for the price of $41.75, to raise funds of $200 million, mainly for polysilicon plant and wafer factory expansion.It is reported that LDK LDK will use 60% of the net proceeds of the issuance of the company to support the construction of polysilicon plant, the use of polysilicon to expand the production capacity of 30%, for the general business activities of 10%.
Q:Why integrated circuit electronic devices should be integrated on silicon
Integrated circuit (integrated circuit) is a kind of micro electronic device or component. With certain techniques, the transistor, required a circuit of resistance, capacitance and inductance components and interconnect wiring together, produced in a small or a few bits of the semiconductor wafer or substrate, and then encapsulated in a tube shell, a micro structure required for the circuit function; all of them element in the structure has formed a whole, so that the electronic components to miniaturization, low power consumption, high reliability and intelligent a huge step forward. It is represented by the letter "IC" in the circuit. The inventor of the integrated circuit is Jack Kilby (based on Ge) and the (silicon based (Si) integrated circuit). Most of the semiconductor industry today is based on silicon integrated circuit.
Q:How to extract silicon from silicon wafers
Slice: cut a single crystal silicon rod into a thin wafer with an exact geometry. In this process, the silica fume is produced by water leaching to produce waste water and silicon slag.
Q:What are the raw materials of silicon wafers
Silicon transistorSemiconductor materials can be divided into silicon and germanium transistors. According to the polarity of the transistor can be divided into germanium NPN transistor, germanium PNP transistor, silicon NPN transistor and silicon PNP transistor.
Q:What is the meaning of the wafer (100), the crystal orientation index or the crystal plane index
The coordinate system is set up in the crystal cellIs the coordinate of the direction vector

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