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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


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Q:Why the resistivity of silicon wafer is high and low
If the thermistor is more normal. For example, when you hold your hands
Q:Polished silicon wafers can be most SEM substrates
A lot of nanotubes, wires and so on are grown on similar substrates, and then direct SEM observation.
Q:What are the reasons for the phenomenon of monocrystalline silicon chip
Or storage time is too long, vacuum packaging problems, the outside world has the dust into the adsorption on the surface of silicon, this will happen. There is the central part of the polishing process, there is a problem of pressure, resulting in the removal of the center is not enough, the surface roughness is very poor, in the semiconductor level light irradiation, the center of the silicon will appear black.
Q:Is solar silicon wafer often harmful to the body?
Thousands of years of evolution of organisms around the common substances are toxic to stimulate immune function.
Q:Why silicon wafers are made in watts!
A - (Si) amorphous silicon cells usually use high frequency glow discharge method to decompose the silane gas. Due to the low deposition temperature, the film can be deposited on glass, stainless steel plate, ceramic plate and flexible plastic sheet with a thickness of about 1 m, which is easy to large area (05rn * l.0m), and the cost is low. The structure of P in is adopted. In order to improve the efficiency and improve the stability, sometimes also made of three layers of P in multilayer laminated structure, or insert some transition layer. Its commercial production continued to grow, with an annual output capacity of 45MW / A, 10MW production line has been put into production, the global market volume of about 10 million per month, ranking first in the thin film battery. The development of integrated a - Si solar battery components, the use of the effective area of laser cutting is more than 90%, small area conversion efficiency increased to 14.6%, a large production of 8 to 10%, the highest efficiency of the laminated structure is 21%. Research and development trend is to improve the characteristics of the film, the precise design of photocell structure and control the thickness of each layer, improve the interface between the layers of state, in order to achieve high efficiency and high stability.
Q:How much is the thickness of the silicon wafer
Around 0.670mm. Wafer must be thinned, otherwise the loss of dicing knife
Q:The relationship between the weight and the power of solar wafers!
The thickness of the silicon wafer is unchanged and the weight is unchanged:156*156,8 inch polycrystalline silicon chip efficiency reached 16%, single-chip power of 3.89W.This can be pushed: the thickness of the silicon wafer is 180, the efficiency is up to 16%, and the consumption of the single silicon is 3.89w*7g/w=27.23g.When the thickness of silicon wafer is 180, and the weight of silicon wafer is unchanged, the conversion rate of polycrystalline silicon chip is up to 18%, and the chip power is 156*156*0.18/1000=4.38WThis can be pushed: the thickness of the silicon wafer is 180, the weight of the silicon wafer is unchanged, and the conversion rate of the polycrystalline silicon sheet is up to 18%, and the polysilicon consumption per watt is 27.23/4.38=6.2g
Q:Why do you use a concentrated sulfuric acid and hydrogen peroxide to wash silicon?
But it is best not to use, the use of water under normal conditions and these two kinds of things can be caustic clean silicon, 100% recycled mortar is not the problem, but this requires tens of thousands of cost and appropriate design, I am clean
Q:What are some of the silicon wafer factory
The following is a silicon production company series positions distribution table, you can refer to the 1 equipment management department manager deputy manager of electrical equipment equipment maintenance engineer mechanical equipment maintenance Engineer Association and insurance technician equipment management maintenance team leader electric operation monitor operation duty electrician maintenance electrician maintenance mechanic subtotal
Q:I would like to ask what the purpose of the use of semiconductor silicon wafers, doped with boron ah?
PN junction has a single conductivity, semiconductor rectifier is made of the characteristics of the PN junction. Such as: large scale integrated circuit is under the high temperature for the impurity required in a certain way (thermal diffusion and ion implantation) incorporated into the silicon wafer surface layer, and make it reach the required quantity and distribution, manufacturing a PN junction, interconnect and ohmic contact to complete.

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