Solar Silicon Wafer

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Specifications

IC grade mono silicon wafer
1.Used in various discrete devices
2.High Purity 11N
3.Growth Method :CZ

IC grade mono silicon wafer

IC grade mono silicon wafer
Size4"/5"/6"
Growth methodCZ
GradePrime grade
Diameter100±0.4mm / 125±0.5mm / 150±0.5mm
Orientation<111>/<100>
TypeN-type/P-type
DopantP-type:Boron
N-type:Phos./As./Sb.
Purity11N(99.999999999%)
Oxygen Content18 New PPMA
Carborn Content1 New PPMA
Resistivity0.001Ω·cm                                                          
Thickness200um, or according to your requirement
OthersTTV10um, Bow35um,Warp35um
Particles0.3um@10PPW
SurfaceFrond side polished,back side etched.
MOQ100pcs
PackagePacked in cassette,and sealed in vacuum bag,25pcs/cassette.
PriceAccording to your specification,especially resistivity and thickness


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