High Current Solar Cell 16.8% Polycrystalline Silicon Solar Cell Price

Ref Price:
Loading Port:
Shanghai
Payment Terms:
TT OR LC
Min Order Qty:
1000 pc
Supply Capability:
100000 pc/month

OKorder Service Pledge

Quality Product

Order On-line Tracking

Timely Delivery

OKorder Service Pledge

Credit Rating

Credit Services

Credit Purchasing

Share to:

Product Description:

4 Bus Bars 156*156 17.6% efficiency poly solar cell 

PHYSICAL CHARACTERISTICS

 

Dimension:  156mm x 156mm ± 0.5mm

Wafer Thickeness:  180um+20um and 200um+20um

Front(-)                  Four 1.2mm silver busbar

                               Silicon nitride blue anti-reflection coating

                             

Back(+)                 aluminum back surface field
                                1.75mm(silver)  wide segment soldering pads

High Current Solar Cell 16.8% Polycrystalline Silicon Solar Cell Price


 Typical Electrical Characteristics

 

Efficiency

W(Pmpp)

V(Umpp)

A(Impp)

V(Uoc)

A(Isc)

17.4-17.5

4.234

0.517

8.231

0.622

8.759

17.5-17.6

4.259

0.519

8.243

0.623

8.769

17.7-17.8

4.283

0.521

8.256

0.625

8.779

17.8-17.9

4.307

0.523

8.268

0.626

8.788

17.9-18.0

4.332

0.525

8.281

0.627

8.798

18.0-18.1

4.380

0.529

8.306

0.629

8.808

18.1-18.2

4.405

0.531

8.318

0.632

8.818

18.2-18.3

4.429

0.533

8.331

0.633

8.837

18.3-18.4

4.453

0.535

8.344

0.634

8.847

18.4-18.5

4.478

0.537

8.356

0.636

8.856

18.5-18.6

4.502

0.539

8.369

0.637

8.866

 

 

 

 


Efficiency

W(Pmpp)

V(Umpp)

A(Impp)

V(Uoc)

A(Isc)

20.90-21.00

5.06

0.557

9.007

0.653

9.688

20.80-20.90

5.04

0.556

9.062

0.652

9.683

20.70-20.80

5.02

0.554

9.055

0.651

9.684

20.60-20.70

4.99

0.552

9.033

0.651

9.672

20.50-20.60

4.97

0.550

9.002

0.650

9.673

20.40-20.50

4.94

0.548

9.012

0.649

9.674

20.30-20.40

4.92

0.546

9.009

0.649

9.655

20.20-20.30

4.89

0.543

9.012

0.648

9.634

20.10-20.20

4.87

0.541

8.998

0.648

9.617

20.00-20.10

4.85

0.540

8.977

0.647

9.600



*Data under standard testing conditional (STC):1,000w/m2,AM1.5, 25°C , Pmax:Positive power tolerance.

 

3 Bus Bars 156*156 17.4% efficiency poly solar cell 

Dimension:  156 mm x 156 mm ± 0.5 mm

Wafer Thickeness: 156 mm x 156 mm ± 0.5 mm


High Current Solar Cell 16.8% Polycrystalline Silicon Solar Cell Price

Typical Electrical Characteristics:

 

Efficiency code16601680170017201740176017801800182018401860
Efficiency (%)16.616.817.017.217.417.617.818.018.218.418.6
Pmax       (W)4.044.094.144.194.234.284.334.384.434.484.53
Voc          (V)0.6120.6150.6180.6210.6240.6270.6290.630.6330.6350.637
Isc           (A)8.428.468.518.568.618.658.698.738.778.818.84
Imp         (A)7.917.998.088.168.228.278.338.388.438.488.53

* Testing conditions: 1000 W/m2, AM 1.5, 25 °C, Tolerance: Efficiency ± 0.2% abs., Pmpp ±1.5% rel.

* Imin : at 0.5 V


Production:

High Current Solar Cell 16.8% Polycrystalline Silicon Solar Cell Price



Package:


High Current Solar Cell 16.8% Polycrystalline Silicon Solar Cell Price



FAQ:

1. Q: Do you have your own factory?

   A: Yes, we have. Our factory located in Jiangsu

2. Q: How can I visit your factory?
    A: Before you visit,please contact us.We will show you the route or arrange a car to pick you up.
3. Q: Do you provide free sample?
    A: Commenly we provide paid sample.

4. Q: Could you print our company LOGO on the nameplate and package?

   A: Yes, we accept it.And need an Authorization Letter from you.

5. Q: Do you accept custom design on size?

   A: Yes, if the size is reasonable.

6. Q: How can I be your agent in my country?

   A: Please leave feedback. It's better for us to talk about details by email.

7. Q: Do you have solar project engineer who can guide me to install system?

   A: Yes, we have a professional engineer team. They can teach you how to install a solar system.




Send a message to us:

Remaining: 4000 characters

- Self introduction

- Required specifications

- Inquire about price/MOQ

Q:P type and N type monocrystalline silicon chip difference?
The doping of phosphorus in monocrystalline silicon is N type, the more the phosphorus is, the more free electrons, the stronger the conductivity, the lower the resistivity;
Q:Seeking for the video: manual insert silicon wafer single crystal insert method
After the water is put into the plug, each time the number of slices can not be more than fifty pieces, the number of chips too easy to fall damaged silicon. If the chip is not cleaned in time to allow the silicon chip in the water bubble, but the bubble can not be more than an hour
Q:What are the reasons for the phenomenon of monocrystalline silicon chip
Preventive measures are in the ultra clean environment, indirect or direct contact with the silicon process, can not have any metal objects, especially stainless steel, is determined not to appear. There's a silicon chip! It is necessary to ensure the cleanliness of the chemical cleaning liquid, and the ratio is correct. Otherwise, it will also appear on the surface of the silicon wafer. Check polishing machine polishing head, calibration pressure. Also, there can not be bad to the silicon wafer, belonging to scrap wafers, shall be returned to the original factory to find the reasons.
Q:Why is it not easy to use high resistance on the silicon chip integrated circuit
In some places, the resistance of the epitaxial layer is adopted, and the resistance is N type, which has a lot of inconvenience in the circuit, and the numerical value is also very difficult to do
Q:Why should the wafer cut side, cut out edge Jiaosha
In fact, early silicon is not cutting edge, but with the development of microelectronics industry began the following reasons: cutting edge, W2) i: J n$W% L* M1 s `&;1, n can do a plurality of microelectronic devices on the wafer, cut down, and there is a crystal to crystal growth requirements, cutting along a direction for cutting chaos crack, cleavage is the professional said. The cutting edge tells you the direction of cleavage.2, N type and P type silicon wafer, a standard trimming is also inform you that it is n type or P type electrical characteristics, electrical characteristics, u$J2 z/ h 9 - O3, microelectronics production has been automated, such as lithography exposure if there is no cutting edge positioning, then the mask plate and the chip will be a difference of 180 degrees or a certain location, production efficiency will be very low...,4, the use of a lot of silicon, in addition to n/p also have crystal direction, for example, do MEMS requires corrosion anisotropy will be used <110> crystal direction, and MOS products in order to reduce the influence of the surface state requirements with <100> crystal...
Q:Silicon wafer cleaning after the two sides of the upper and lower grille also has a basket of flowers (Bai Yin)
You don't think about it, because it's not a simple process parameter, what is the material, is a comprehensive problem of Chemical Physics
Q:What does TTV mean in silicon wafer production?
TTV is "total thickness variation" acronym or abbreviation, meaning total thickness variation, total thickness deviation.There is a method to measure the consistency of the thickness of silicon wafer, which is called the total thickness deviation (TTV)
Q:The metal in the silicon wafer
The properties of silicon have excellent electrical properties. The band gap is moderate, and is 1.21 ev. Higher carrier mobility, the electron mobility is 1350 cm / sec / V /, hole mobility is 480 cm / sec / v. The resistivity at room temperature (300K) up to 2.3 x 10 - Europe - cm wide, doped resistivity can be controlled in 10 - to 10 - Europe - cm, can meet the needs of manufacturing various devices. The minority carrier lifetime of the single crystal silicon is longer than that in a few tens of microseconds to 1 milliseconds. Larger thermal conductivity. The chemical property is stable, and is easy to form a stable thermal oxidation film. It can be used to realize the surface passivation and protection of the PN junction in the fabrication of planar silicon devices, and the metal oxide semiconductor structure can be formed to produce MOS field effect transistors and integrated circuits. The properties of the PN junction has good characteristics, so that the silicon device has the advantages of high pressure, the reverse leakage current, high efficiency, long service life, good reliability, good heat conduction, and in the 200 - high temperature operation etc..
Q:Pure curiosity why silicon wafer is round
Why does the silicon grown in the melt not directly cut into square, it is not easy to put it......Rub... In order to reduce costs ah.
Q:How do we use the scanning electron microscope
Drop onto silicon wafers, conditional can use infrared baking oven, or 50 degrees Celsius dry, to reduce organic film on sample surface imaging difficulties.

1. Manufacturer Overview

Location
Year Established
Annual Output Value
Main Markets
Company Certifications

2. Manufacturer Certificates

a) Certification Name  
Range  
Reference  
Validity Period  

3. Manufacturer Capability

a)Trade Capacity  
Nearest Port
Export Percentage
No.of Employees in Trade Department
Language Spoken:
b)Factory Information  
Factory Size:
No. of Production Lines
Contract Manufacturing
Product Price Range