6 Inch Multi Solar Cell -- 156 x 156 mm

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100 watt
Supply Capability:
10000 watt/month

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Product Description:

6 Inch Multi Solar Cell -- 156 x 156 mm

FEATURES
`Long Service Life
`High Efficiency Solar Cells
`Special Aluminum Frame Design
`High Transmission, Low Iron Tempered Glass
`Advanced Cell Encapsulation

Solar Module Specifications

  Mono 80W—100W

Module

Type (36 Series)

Encapsulation

Glass/EVA/Cells/EVA/TPT

Parameters

SNM-M80(36)

SNM-M85(36)

SNM-M90(36)

SNM-M95(36)

SNM-M100(36)

Max power

Pm(W)

80W

85W

90W

95W

100W

Tolerance

+/-3%

Open circuit voltage

Voc(V)

21.2

21.8

21.8

22.3

22.6

Short circuit current

Isc(A)

4.84

5.00

5.30

5.44

5.68

Max. power voltage

Vmp(V)

17.5

18.0

18.0

18.5

18.5

Max. power current

Imp(A)

4.57

4.72

5.00

5.14

5.40

Dimensions

(L*W*H)

1200x540x35mm

Net Weight

(kg)

9

Max. system voltage

(V)

1000VDC

Operate Temp. Scope

-40/+85'C

Resistance

227g steel ball fall down from 1m height and 120m/s wind

Warranty

Pm is no less 90% in 10 years and no less 80% in 25 years

STC

(Standard Test Condition: 1000W/m2, AM1.5, and 25'C)

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6 Inch Multi Solar Cell -- 156 x 156 mm

6 Inch Multi Solar Cell -- 156 x 156 mm

6 Inch Multi Solar Cell -- 156 x 156 mm

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Q:Silicon chip cutting, NTC442 machine, a knife can cut the number of slices
This and your slot.. The stick / slot cutting root number number = *.
Q:Begged monocrystalline silicon rod is to use what tools and equipment to cut into silicon
General loss of about 40%, the general thickness of about 190um silicon, cutting seam in 120um
Q:What is a silicon chip made of?
The silicon rod pulling ingot is finished, the silicon wafer, and then processed to solar cell sheet, processing factory is finished, then the solar street lamp assembly
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
Because monocrystalline silicon and the battery is not a quadrilateral, so the 125 refers to the length of a single crystal square
Q:How to extract silicon from silicon wafers
Annealing: double position hot oxidation furnace after nitrogen purging, infrared heating to 300~500 DEG C, silicon wafer surface and oxygen react, so that the surface of silicon dioxide protection layer.
Q:What are the aspects of silicon wafer testing?
Wafer inspection the main test items are: side, diagonal, chamfer, thickness, TTV, line, chipping, cracks, warping, oil, resistivity, lifetime.
Q:Hydrogen passivation mechanism of hydrogen fluoride HF in silicon wafer RCA cleaning process
Wire cut damage layer thickness of 10 microns.Generally use 20% alkali solution in the corrosion condition at 90 C
Q:Monocrystalline silicon processing technology
The use of more than one set of cutting lines is an innovative way to increase the output of the machine under the condition of keeping the speed. The latest MaxEdge system of applied materials company uses a unique set of two independent control cutting components.MaxEdge is the industry's first use of specially designed fine wire secant system, the minimum can reach 80 M. Compared with the HCT B5 wire system applied materials industry leading, these improvements reduce the loss of the silicon material yield up to 50%.Wire system with higher productivity can reduce the number of tools in wafer yield under the same. Therefore, manufacturers can significantly reduce the cost of equipment, operators and maintenance.Reducing the consumption of silicon wafers is directly reducing the cost per watt of solar power.Wire products marketThe silicon wafer suppliers and hope to integrate the crystalline silicon PV module manufacturers to control their own slice process requires the use of wire saw device. Monocrystalline silicon and polycrystalline silicon photovoltaic technology are needed to use it.
Q:After wafer cleaning, how to change the film?
Quality solutionCleaning method(a) RCA cleaning:RCA pioneered by Werner Kern in the N.J.Princeton RCA laboratory in 1965, and hence the name.RCA cleaning is a typical wet chemical cleaning.RCA cleaning is mainly used for cleaning the surface film, organic particles and metal contamination.1, particle cleaningThe main APM removal of silicon surface particles (also known as SC1) cleaning solution (NH4OH + H2O2 + H2O) to APM in the cleaning. The cleaning solution, due to the effects of H2O2, the silicon surface has a layer of natural oxide film (SiO2), a hydrophilic surface and between silicon particles can soaking cleaning liquid, silicon surface the natural oxide film and a silicon wafer surface by NH4OH corrosion, the particles will fall into the cleaning solution. The corrosion rate and the particle removal amount of silicon surface, for removing particles, corrosion must be a certain amount. In the cleaning solution, because the potential of silicon surface is negative, and most of the particles are repulsive force to prevent the adsorption of particles to the silicon surface.
Q:What is a silicon wafer cutting edge material?
The cutting edge of silicon wafer is the cutting edge of the cutting machine. The utility model is mainly used for cutting silicon wafer and semiconductor wafer, and is one of the three consumable materials of silicon wire cutting at present

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