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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


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Q:What is the harm of silicon chip into the fingers?
The silicon rod into silicon wafer after printed, someone with bare hands touched the wafer, because the chemical composition of the finger is very complex, in the cleaning process is not removed, causing subsequent corrosion is not uniform, the more to the more obvious after section
Q:What is the role of the semiconductor wafer
The main role of the glue is coated with photoresist coated flat, the use of high-speed rotation of the centrifugal force
Q:Wafer cutting will appear thick sheet, I would like to ask what the reasons are
Silicon wafer wire cutting will appear thick sheet, for the following reasons:1, the whole chip thickness:The A. guide slot is not uniform. Wafer thickness = slot steel wire diameter -4 times (SIC) D50, according to the requirements of wafer thickness required, you can calculate the best slot. In addition, because in the cutting process, steel wire wear, steel wire diameter decreases, and the port changed from round to oval, so the guide slot should be compensated according to the loss situation, to ensure the uniformity of wafer thickness.
Q:What is the thickness of the semiconductor wafer used today?
0.670mm or so. The wafer must be thinned, otherwise the loss of the dicing knife is very large, and it is necessary to draw two knives
Q:What is the role of silicon wafer annealing furnace, what specific requirements
The resistivity changes after annealing, as if it is mainly about the high resistivity of the oxygen donor.
Q:8 inch monocrystalline silicon area?
Generally refers to the round wafer, 8 inch refers to the diameter of 8 inches, "=2.54cm", the area of the circle you will ask for 1.
Q:How to make monocrystalline silicon solar cells
Phosphate glassThe process is used for solar cell production in the manufacturing process, through chemical etching silicon that is immersed in hydrofluoric acid solution, complexes six fluorosilicic acid to produce chemical reaction to produce soluble phosphorus silicon glass layer, a diffusion system to remove the node after the formation of the surface of the silicon wafer. In the diffusion process, POCL3 reacts with O2 to form P2O5 on the surface of silicon wafer. P2O5 reacted with Si to produce SiO2 and phosphorus atoms, which form a layer of phosphorus containing SiO2 on the surface of the silicon wafer. Removing phosphorosilicate glass equipment is generally composed of a main body, a cleaning tank, manipulator, servo drive system, electric control system and the automatic mixing acid system components, the main power source of hydrofluoric acid, nitrogen, compressed air, water, wastewater and exhaust heat. Hydrofluoric acid is capable of dissolving silicon dioxide because of the reaction of hydrofluoric acid and silica to produce volatile four fluorinated silicon gas. If the hydrofluoric acid is too heavy, the reaction of four fluorinated silicon will further react with hydrofluoric acid to produce soluble complex and the material of the six fluorine acid.
Q:The process for steel wire cutting silicon factory, we use HCTB5 wire, you can do?
Product advantages of electroplated diamond wireCurrent line cutting methodInternal cuttingThe material utilization rate is only 40%~50%, and there are many defects, such as the wide kerf, the lower material, the poor precision of the surface shape, the depth of the surface damage layer and the size of the workpiece being machined.
Q:The meaning of various names
Crystal column ends can not be cut into available wafer parts can be called the head tail. Preliminary cutting out the wafer, usually can not be used as a rough surface, wafer production, and usually in the subsequent process of polishing, polishing the noun to which. According to the different requirements of wafer fabrication, usually need to rough wafer in doping some impurities, such as P, B and so on, to change its resistance, thus had low resistance, high resistance, heavily doped term coated can be understood as the extension of Epi, according to the specific requirements of the device semiconductor is made of wafer, is usually used in high-end IC and special IC, such as Si on insulator (SOI). In the production process of IC wafer
Q:After cutting a few chips, mortar density is getting lower and lower
PEG water absorption is very strong, as long as the air humidity is slightly higher, then did not cut the water content of a mortar on the rise, as well as the viscosity of mortar and mortar temperature is related to the temperature difference, the viscosity of mortar to a difference of about 10

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