Amorphous silicon dice specification 1

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.

3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly

In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.

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Q:Silicon chip cutting, NTC442 machine, a knife can cut the number of slices
Do not stick stick with the United States and the United States, the line will be glued to the line together. With the kind of 3M model of the United States and rubber repair jumper glue will not stick on the line, if the jumper is too much can be inserted in the United States and the United States to close the line has been going to the end.
Q:The significance of silicon wafer heat treatment
The significance of silicon wafer heat treatmentHeat treatment temperature requirements: 650 + 5 c;The purpose of heat treatment is to restore the true resistivity of Czochralski silicon wafers;
Q:How is the wafer appearance caused? The performance of the chip half white, a class of black! Seek help!
If it is dry in the air, it should be prevented from drying before cutting!
Q:How to make monocrystalline silicon solar cells
Surface fleeceThe preparation of single crystal silicon wafer is the use of anisotropic etching of silicon on the surface of the silicon per square centimeter to form several million square pyramidal structure, namely, the Pyramid structure. Due to the multiple reflection and refraction of incident light on the surface, the absorption of light is increased, and the short circuit current and conversion efficiency are improved. Anisotropic etching of silicon in alkaline solution liquid is usually hot, available alkali sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc.. Most of them were prepared by using dilute sodium hydroxide solution with a concentration of about 1%, and the corrosion temperature was 70-85. In order to obtain a uniform texture, but also in the solution add alcohols such as ethanol and isopropanol as complexing agent to accelerate the corrosion of silicon. In the preparation of velvet, the silicon chip must be first surface corrosion, alkaline or acidic etching solution to about 20 ~ 25 m, corrosion in the face, the general chemical cleaning. After surface preparation of silicon wafers are not suitable for long-term storage in the water, in order to prevent contamination, should be spread as soon as possible.
Q:Why is it not easy to use high resistance on the silicon chip integrated circuit
In some places, the resistance of the epitaxial layer is adopted, and the resistance is N type, which has a lot of inconvenience in the circuit, and the numerical value is also very difficult to do
Q:How to detect the surface finish of photovoltaic silicon wafers, what equipment?
Physical examination of the surface roughness on the line, whether it can be cleaned with chemical or optical
Q:Why not use N type silicon crystal silicon battery
N type silicon wafer from the raw material price or quantity, and P type silicon wafer or some gap. This also led to the battery chip manufacturers for N battery has been in the laboratory stage, not mass production.Again, the P type battery is to take GA or boron, but the N type batteries into another material, I am not very clear, not engage in technology, huh, huh, huh, huh.The above information, I hope to help you.
Q:Silicon wafer cleaning after the two sides of the upper and lower grille also has a basket of flowers (Bai Yin)
You don't think about it, because it's not a simple process parameter, what is the material, is a comprehensive problem of Chemical Physics
Q:The metal in the silicon wafer
Monocrystalline silicon or polycrystalline silicon chip to askSilicon is an important semiconductor material, chemical element symbol Si, the silicon used in the electronic industry should have high purity and excellent electrical and mechanical properties. Silicon is one of the largest and most widely used semiconductor materials, and its output and consumption mark the level of a country's electronics industry. In the research and production, silicon materials and silicon devices promote each other. In the Second World War, the use of silicon to produce high-frequency radar crystal detector. The purity of silicon is very low and not single crystal. In 1950, the first silicon transistor was developed to improve the interest of preparing high quality single crystal silicon. Czochralski silicon (CZ) was successfully used in 1952. In 1953, the crucible free zone melting (FZ) method was developed, which can be used for physical purification and single crystal pulling. In 1955, four pure silicon was produced by zinc reduction method, but it could not meet the requirement of manufacturing transistor. In 1956 of hydrogen reduction method of trichlorosilane. The amount of impurities in silicon and after a period of exploration after hydrogen reduction of trichlorosilane method has become a kind of main method.
Q:What is a silicon wafer
Is usually used in high-end IC and special IC, such as Si on insulator (SOI) wafer. In the production process of IC, need some wafer to test the status of the production process, such as the level of particle, the etching rate, defect rate and so on, these are often called wafer control chip, the control plate is also used with normal production batch process together to test the quality condition of a process, such as the CVD film thickness. In the production equipment maintenance or repair, immediately production batch of wafer, easy to cause the scrap, and usually use some very low cost wafer to run the process to determine the quality of maintenance or repair work, which is usually called wafer dummy wafer, of course, sometimes dummy wafer also can be used in the normal production process, such as machine must wafer to process a number of problems with dummy wafer complement, and some machines must be in the process of a certain number of wafer A form of dummy run, otherwise the process can not guarantee the quality and so on many wafer and so on can be called dummy. block basically can be regarded as a kind of.Dummy wafer dummy, wafer control chip, a guard sheet usually can be recycled.

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