Solar Cell High Quality A Grade Cell Polyrystalline 5v 17.4%

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hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 17.4%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 17.4%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:The relationship between the weight and the power of solar wafers!
Calculation:The thickness of 180 unchanged, unchanged weight of the 156 monocrystalline silicon, conversion efficiency of up to 20% cases,Monolithic Power: 156*156*0.2/1000=4.86WThe consumption per watt of monocrystalline silicon wafers is: 27.23g/4.86W=5.6g/w
Q:How is the silicon chip integrated circuit?
The following procedures: scribing - sintering base - bonding - in - Test - Packaging - aging - testing - printing (laser or screen printing)
Q:What to do with silicon. What is the relationship between the semiconductor and the PCB board
This problem may be more profound understanding of microelectronics.I am learning communication, simply say my understandingPure silicon wafer conductivity is relatively weak. But the incorporation of trivalent impurities or pentavalent after a carrier (free electrons or holes) and semiconductors. The electrical conductivity of semiconductors and the type of doping, the concentration and process. Knowledge of semiconductor doping analog electronic circuits on the textbook.
Q:Process flow of wafer wafer ultrasonic cleaning machine?
Plasma wafer cleaning parameters:Residual plasma cleaning method of particles 1, silicon wafer surface, which comprises the following steps: firstly, gas flushing process, and then the gas plasma glow; the use of either gas from the 02, Ar, N2; gas washing process parameters set process: the chamber pressure of 10-40 mTorr, process gas flow 100-500sccm time, 1-5s; process parameters of starting process is: the chamber pressure of 1040 mTorr, process gas flow on the electrode 100-500sccm, power 250-400W, time 1-10s.2, as described in the plasma cleaning method, the invention is characterized in that the gas used is 23, plasma cleaning method, which is characterized in that the process parameters of gas flushing process is: the chamber pressure of 15 mTorr, process gas flow 300sccm, time 3S; process parameters of starting process is: the chamber pressure of 15 mTorr, process gas flow on the electrode 300sccm, power 300W, time Ss.4, plasma cleaning method, which is characterized in that the process parameters of gas flushing process is: the chamber pressure of 10-20 mTorr, process gas flow 100-300sccm, time 1-5s; process parameters of starting process is: the chamber pressure of 10-20 mTorr, process gas flow on the electrode 100-300sccm, power 250-400W, when Lu 1-5s.
Q:Development trend of monocrystalline silicon wafer
Speaking of silicon, we have to mention Chinese LDK! The world's largest manufacturer of solar wafers - Jiangxi LDK LDK Solar Co. Ltd., announced in September 20, 2008, the company has been successful in the United States on a day before the issuance of 4 million 800 thousand shares of American Depositary Shares (ADS), for the price of $41.75, to raise funds of $200 million, mainly for polysilicon plant and wafer factory expansion.It is reported that LDK LDK will use 60% of the net proceeds of the issuance of the company to support the construction of polysilicon plant, the use of polysilicon to expand the production capacity of 30%, for the general business activities of 10%.
Q:Why integrated circuit electronic devices should be integrated on silicon
Another image, that is, the integrated circuit is a combination of some electronic components and wiring, no insulation and insulation as a support. It is achieved by adding bias and other techniques to isolate.And for why it's cheaper to use silicon, it's not because of its semiconductor nature that it uses it. The formation of P and N, a multi hole, a multi electron, and thus the role of different doping. GaAs expensive, but the performance is good, mostly for high-speed circuits and military aspects.
Q:How to extract silicon from silicon wafers
Chamfer: the annealed silicon wafer is trimmed into an arc shape, which can prevent the wafer edge from cracking and lattice defect, and increase the flatness of the epitaxial layer and the photoresist layer. In this process, the silica fume is produced by water leaching to produce waste water and silicon slag. [1]
Q:Consult the difference between silicon and battery
Silicon wafer is generally refers to the silicon ingot with diamond wire or just cut into pieces,
Q:After wafer cleaning, how to change the film?
Quality solutionCleaning method(a) RCA cleaning:RCA pioneered by Werner Kern in the N.J.Princeton RCA laboratory in 1965, and hence the name.RCA cleaning is a typical wet chemical cleaning.RCA cleaning is mainly used for cleaning the surface film, organic particles and metal contamination.1, particle cleaningThe main APM removal of silicon surface particles (also known as SC1) cleaning solution (NH4OH + H2O2 + H2O) to APM in the cleaning. The cleaning solution, due to the effects of H2O2, the silicon surface has a layer of natural oxide film (SiO2), a hydrophilic surface and between silicon particles can soaking cleaning liquid, silicon surface the natural oxide film and a silicon wafer surface by NH4OH corrosion, the particles will fall into the cleaning solution. The corrosion rate and the particle removal amount of silicon surface, for removing particles, corrosion must be a certain amount. In the cleaning solution, because the potential of silicon surface is negative, and most of the particles are repulsive force to prevent the adsorption of particles to the silicon surface.
Q:Why do you choose a silicon chip as a chip?
Silicon is a semiconductor, of course, germanium is also, but silicon is easy to find, you go to the ground to see is the siliconPhysical principles on the complex, the first point of memory knowledge to say it, we generally say how much G, strictly speaking, GB, 1GB=1024MB

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