High Current Solar Cell 16.6% Polycrystalline Silicon Solar Cell Price

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Product Description:

4 Bus Bars 156*156 17.6% efficiency poly solar cell 

PHYSICAL CHARACTERISTICS

 

Dimension:  156mm x 156mm ± 0.5mm

Wafer Thickeness:  180um+20um and 200um+20um

Front(-)                  Four 1.2mm silver busbar

                               Silicon nitride blue anti-reflection coating

                             

Back(+)                 aluminum back surface field
                                1.75mm(silver)  wide segment soldering pads

High Current Solar Cell 16.6% Polycrystalline Silicon Solar Cell Price


 Typical Electrical Characteristics

 

Efficiency

W(Pmpp)

V(Umpp)

A(Impp)

V(Uoc)

A(Isc)

17.4-17.5

4.234

0.517

8.231

0.622

8.759

17.5-17.6

4.259

0.519

8.243

0.623

8.769

17.7-17.8

4.283

0.521

8.256

0.625

8.779

17.8-17.9

4.307

0.523

8.268

0.626

8.788

17.9-18.0

4.332

0.525

8.281

0.627

8.798

18.0-18.1

4.380

0.529

8.306

0.629

8.808

18.1-18.2

4.405

0.531

8.318

0.632

8.818

18.2-18.3

4.429

0.533

8.331

0.633

8.837

18.3-18.4

4.453

0.535

8.344

0.634

8.847

18.4-18.5

4.478

0.537

8.356

0.636

8.856

18.5-18.6

4.502

0.539

8.369

0.637

8.866

 

 

 

 


Efficiency

W(Pmpp)

V(Umpp)

A(Impp)

V(Uoc)

A(Isc)

20.90-21.00

5.06

0.557

9.007

0.653

9.688

20.80-20.90

5.04

0.556

9.062

0.652

9.683

20.70-20.80

5.02

0.554

9.055

0.651

9.684

20.60-20.70

4.99

0.552

9.033

0.651

9.672

20.50-20.60

4.97

0.550

9.002

0.650

9.673

20.40-20.50

4.94

0.548

9.012

0.649

9.674

20.30-20.40

4.92

0.546

9.009

0.649

9.655

20.20-20.30

4.89

0.543

9.012

0.648

9.634

20.10-20.20

4.87

0.541

8.998

0.648

9.617

20.00-20.10

4.85

0.540

8.977

0.647

9.600



*Data under standard testing conditional (STC):1,000w/m2,AM1.5, 25°C , Pmax:Positive power tolerance.

 

3 Bus Bars 156*156 17.4% efficiency poly solar cell 

Dimension:  156 mm x 156 mm ± 0.5 mm

Wafer Thickeness: 156 mm x 156 mm ± 0.5 mm


High Current Solar Cell 16.6% Polycrystalline Silicon Solar Cell Price

Typical Electrical Characteristics:

 

Efficiency code16601680170017201740176017801800182018401860
Efficiency (%)16.616.817.017.217.417.617.818.018.218.418.6
Pmax       (W)4.044.094.144.194.234.284.334.384.434.484.53
Voc          (V)0.6120.6150.6180.6210.6240.6270.6290.630.6330.6350.637
Isc           (A)8.428.468.518.568.618.658.698.738.778.818.84
Imp         (A)7.917.998.088.168.228.278.338.388.438.488.53

* Testing conditions: 1000 W/m2, AM 1.5, 25 °C, Tolerance: Efficiency ± 0.2% abs., Pmpp ±1.5% rel.

* Imin : at 0.5 V


Production:

High Current Solar Cell 16.6% Polycrystalline Silicon Solar Cell Price



Package:


High Current Solar Cell 16.6% Polycrystalline Silicon Solar Cell Price



FAQ:

1. Q: Do you have your own factory?

   A: Yes, we have. Our factory located in Jiangsu

2. Q: How can I visit your factory?
    A: Before you visit,please contact us.We will show you the route or arrange a car to pick you up.
3. Q: Do you provide free sample?
    A: Commenly we provide paid sample.

4. Q: Could you print our company LOGO on the nameplate and package?

   A: Yes, we accept it.And need an Authorization Letter from you.

5. Q: Do you accept custom design on size?

   A: Yes, if the size is reasonable.

6. Q: How can I be your agent in my country?

   A: Please leave feedback. It's better for us to talk about details by email.

7. Q: Do you have solar project engineer who can guide me to install system?

   A: Yes, we have a professional engineer team. They can teach you how to install a solar system.




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Q:Geometric parameters and testing of silicon wafer
Silicon chips have side length 125mm, 156mm, and 125 of the large chamfer diagonal 156mm and small chamfer diagonal 165mm, polycrystalline silicon chip to the side of the 156mm based, diagonal 219.2mm.
Q:The purpose and means of chemical etching of silicon wafers?
Corrosion is to create suede, was not intended to be clean, but cleaning agents will inevitably etch the surface damage layer of wafer line after cutting in the solar industry is a must, because it can produce suede.
Q:What are the difficulties of silicon wafer cutting?
During the cutting process, the wafer quality and rate of finished products played a major role in the grain type, viscosity of silicon carbide powder cutting fluid and particle size, the viscosity of mortar, mortar flow, steel wire speed and wire tension and workpiece feed speed.TTV: and TTV stria stria and is a headache in the wafer processing, from time to time there will be a knife, impossible to guard against. TTV is when the knife into the line, and is easy to appear in the time line bow.
Q:What is the difference between the purpose of wafer cleaning and the cleaning of silicon material, what is the difference between the acid used
A technique used to reduce the reflectivity of silicon, which is cleaned only by hydrofluoric acid
Q:The higher the resistivity of silicon wafers, the better?!!
Low resistivity is helpful to improve the opening pressure, high resistivity and help to improve the short-circuit current, the best match between the two is about 1 -3! Own understanding!
Q:How much harm silicon on the human body
Silicon is a semiconductor material, if it is to detect the bare silicon wafer, then there is no harm
Q:Wafer cutting will appear thick sheet, I would like to ask what the reasons are
Silicon wafer wire cutting will appear thick sheet, for the following reasons:1, the whole chip thickness:The A. guide slot is not uniform. Wafer thickness = slot steel wire diameter -4 times (SIC) D50, according to the requirements of wafer thickness required, you can calculate the best slot. In addition, because in the cutting process, steel wire wear, steel wire diameter decreases, and the port changed from round to oval, so the guide slot should be compensated according to the loss situation, to ensure the uniformity of wafer thickness.
Q:Why can silicon chips store information? Even if it is a miniature circuit, unplug the power will be no electricity
The principle of the board as you say, the power can be changed according to the requirements of the crystal in the electronic case, the power will not stop after the move, but also as the pawn as the preservation of information,
Q:After wafer cleaning, how to change the film?
2, surface metal cleaning(1) HPM (SC22) cleaning (2) DHF cleaningMetal contamination of silicon surface has two kinds of adsorption and desorption mechanism: (1) compared with the negatively charged silicon high metal such as Cu, Ag, Au, from the silicon surface to capture electron on the surface of the silicon direct formation of chemical bonds. Has a high redox potential of the solution to obtain electrons from these metals, resulting in metal the ionized form dissolved in the solution, so that this type of metal removed from the silicon surface. (2) compared with the negatively charged silicon low metal, such as Fe, Ni, Cr, Al, Ca, Na, K can be easily ionized in solution and deposited on the silicon wafer surface natural oxide film or a chemical oxide film on these metals in dilute HF solution with a natural oxide film or a chemical oxide film is easily removed.3, organic cleaningThe removal of organic silicon surface cleaning fluid used is SPM.SPM with high oxidative capacity, metal oxide can be dissolved in solution, and the oxidation of organic compounds to produce CO2 and.SPM cleaning water can remove the surface of silicon wafer heavy organic contamination and some metal, but when organic contamination is heavy will make carbonization of organic matter and difficult to remove by SPM. After cleaning, the silicon surface residual sulfide, the sulfide particles is difficult to use to water wash out.
Q:What is the meaning of a cleaning in a semiconductor silicon wafer process? RCA?
RCA cleaning is to use the RCA method to clean.RCA is a typical and commonly used wet chemical cleaning method:

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