Amorphous silicon dice specification 4

Ref Price:
Loading Port:
China Main Port
Payment Terms:
Min Order Qty:
Supply Capability:

OKorder Service Pledge

Quality Product

Order On-line Tracking

Timely Delivery

OKorder Service Pledge

Credit Rating

Credit Services

Credit Purchasing

Share to:

Product Description:

Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.

3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly

In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.

Send a message to us:

Remaining: 4000 characters

- Self introduction

- Required specifications

- Inquire about price/MOQ

Q:Why not use N type silicon crystal silicon battery
Can use N type silicon chip, the current SUN POWER battery slice, is the use of N type silicon wafer production, conversion efficiency is very high, but the price is not cheap.At present, most of the domestic manufacturers do not have the production of battery N battery pack, it should be a cost problem.
Q:Silicon chip cutting, NTC442 machine, a knife can cut the number of slices
0.310 of the slot, the silicon rod length of 320mm, the theory of number =320/0.31*2=2064What do not understand, ask me to adopt ~ ~ ~ ~ ha!
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
Because monocrystalline silicon and the battery is not a quadrilateral, so the 125 refers to the length of a single crystal square
Q:Ultrasonic cleaning cleaning silicon?
1, silicon wafer wafer ultrasonic cleaning function.2, cleaning the wafer production process, pollutants using ultrasonic cleaning machine effectively remove organic matter, wafer surface particles and metal impurities, natural oxide layer and quartz, plastic containers and accessories, the wafer surface damage characteristics. According to different cleaning process, the corresponding cleaning unit is equipped with independent control.
Q:After the velvet or the original silicon
The complaint can be suppliers, with hydrofluoric acid washed off after processed velvet
Q:What is the meaning of the wafer (100), the crystal orientation index or the crystal plane index
Said the origin and the point of x = 1, y = 1, the linear Z on the =1 atoms, if the crystal is body centered cubic lattice, the crystal orientation through the cube on the diagonal of the atom.
Q:Why is it not easy to use high resistance on the silicon chip integrated circuit
For boron diffusion resistance, its resistivity is determined by the use of a greater length / width ratio, which is subject to the limitations of process and wafer area
Q:What are some of the silicon wafer factory
4 polycrystalline casting workshopassistantIngot casting and painting team leaderPolycrystalline operatorCrucible spray, auxiliarySubtotal5 cutting workshop directorDeputy directorassistantCut the monitorRoll monitorCutting and grinding operation staffMulti line monitorMulti line operatorViscose monitorViscose operatorMortar mixerMortar mixing operatorRecorderConsignorSubtotal
Q:The purpose and means of chemical etching of silicon wafers?
After slicing and grinding, the surface of silicon wafer has a layer of damage and pollution due to processing stress
Q:What is the role of silicon wafer annealing furnace, what specific requirements
I want to be the temperature to more than 1 thousand degrees, and then clean the furnace

1. Manufacturer Overview

Year Established
Annual Output Value
Main Markets
Company Certifications

2. Manufacturer Certificates

a) Certification Name  
Validity Period  

3. Manufacturer Capability

a)Trade Capacity  
Nearest Port
Export Percentage
No.of Employees in Trade Department
Language Spoken:
b)Factory Information  
Factory Size:
No. of Production Lines
Contract Manufacturing
Product Price Range