Amorphous silicon dice specification 4

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


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Q:What is the silicon wafer, the specific definition of what?
The chips made of silicon chips are amazingly powerful. The development of science and technology is driving the development of semiconductors. With the development of automation and computer technology, the cost of this kind of high technology product of silicon chip (integrated circuit) has been reduced to a very low level.
Q:How to deal with silicon wafer annealing
In the straightening process due to influence of single crystal pulling process, the crystal head will produce oxygen donor, existing oxygen donors lead to artificially high P type single crystal silicon head resistivity, annealing at a temperature of 650 degrees, time to out immediately after the fan blowing, rapid cooling, the oxide layer on the surface of polished off. The resistivity of the resistivity drop test. At the same time, the annealing will decrease the lifetime of minority carriers.
Q:Why should the wafer cut side, cut out edge Jiaosha
To determine the crystal, cutting the adhesive carbon or glass, mounted on the fixed equipment.In simple terms is to determine the crystal direction, in order to facilitate future cutting, design graphics to consider this point, and then ask a little deeper, it is necessary to look at the book.Transistors in general with 111 sides, MOS general 110The reason for this is related to doping, corrosion and other post production, but also the activity of different layers of electrons is different, potential energy is not the same.
Q:Why can silicon chips store information? Even if it is a miniature circuit, unplug the power will be no electricity
So when you need to save the power. As you say the iron, can be used to save the information - the tape is the use of micro magnets to record
Q:Process flow of wafer wafer ultrasonic cleaning machine?
Plasma cleaning relates to the field of etching technology, and fully satisfies the removal of residual surface of silicon wafer after etching processKeep particle cleaningBackground technologyIn the etching process, the particles come from many sources: etching gas such as Cl2, HBr, CF4 etc. are corrosive, etching after the end will have a certain number of particles on the surface of the silicon wafer reaction chamber; a quartz cover will produce quartz particles in plasma bombardment; reaction chamber liner (liner) also metal particles will be produced in the etching process for long time. The surface residual silicon etching after particles block conductive connection, cause damage to the device. Therefore, the control of particles is very important in the etching process.
Q:What is a silicon wafer
Silicon is an important material in the IC fabrication, through photolithography and ion implantation on the silicon wafer and other means, can be made into various semiconductor devices made of silicon chip. With amazing computational capabilities. The development of science and technology promotes the development of semiconductor. Development of automation and computer technology, this makes the silicon chip (integrated circuit) high technology product cost has been reduced to a very low degree. This makes the silicon wafer has been widely used in aerospace, industry, agriculture and national defense, and even crept into every family.
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
Because monocrystalline silicon and the battery is not a quadrilateral, so the 125 refers to the length of a single crystal square
Q:What is the difference between silicon wafer P111 and P100
<111> is the coordinate of the direction vector<111> is expressed over the origin and point x = 1, y = 1, Z =1 on a straight line passing through the atom
Q:After cutting a few chips, mortar density is getting lower and lower
There are a lot of things that could happen1 lubricant is not qualified2 too many bubbles in the recycle bin3 mortar selection4, the operation speed is too fast5 wafer density is not uniform (the lowest possible)Try not to contact
Q:Solar silicon wafer cutting fluid can burn explosion?
2, the glass can not be used as the bearing plate of the crystal rod, if the use of graphite plate, grinding down the silicon powder containing a certain amount of graphite, it is difficult to deal with the recovery of silica fume3, can only be used for single crystal cutting4, the cost of the problem, and now the price of diamond wire fell faster, diamond wire cutting costs should be close to the cost of cutting free abrasive

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