Amorphous silicon dice specification 4

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


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Q:How to avoid or reduce the fragmentation of thin silicon wafers without wax polishing?
I don't know how your employees operateYou can put a small bubble in the insertion box below if it is convenient. Can play a buffer role
Q:Hydrogen passivation mechanism of hydrogen fluoride HF in silicon wafer RCA cleaning process
Wire cut damage layer thickness of 10 microns.Generally use 20% alkali solution in the corrosion condition at 90 C
Q:What is a good solar wafer testing equipment?
QCROBOT has been the solar energy as the focus of their products to promote the industry, and has a variety of measurement and control products, for the field of solar energy has launched a variety of measurement and control programs. For example, photovoltaic semiconductor production process control, solar power plant power monitoring system, as well as photovoltaic solar cell volt ampere characteristics test. QCROBOT machine vision system can be used to monitor the shape and size of silicon particles at high temperature. Machine vision can also be used to monitor the quality defects, size measurement, and so on of crystal rods, wafers, panels and components. At present, the QCROBOT vision system and the measurement and control software and hardware platform have been successfully applied to the production and installation process of the solar panel.
Q:Silicon rod / wafer processing production
Another reason is that CZ is easier to produce large size single crystal silicon rods than FZ method. At present, using the method of CZ CZ main equipment: CZ growth furnace growth furnace by CZ components can be divided into four parts: (1) the furnace body comprises a quartz crucible, graphite crucible, heating and insulating element in the furnace wall (2) crystal and crucible for rotary mechanism: including seed chuck, hanging and pulled the rotating element (3) atmosphere pressure control: including gas flow control, vacuum system and pressure control valve (4) control system: including the detection sensor and computer control system processing: charging, melting, necking, shoulder growth, growth, growth and diameter growth of the tail (1) charging: the polysilicon raw materials and impurities in the quartz crucible, the type of impurity depends on the N or P type resistance. Boron, phosphorus, antimony, arsenic. (2): after the melting quartz crucible for polysilicon feedstock after long crystal furnace must be closed and vacuum filling in high purity argon to maintain a certain pressure range, and then open the graphite heater power supply, heating to the melting temperature (1420 DEG C) above, the polysilicon raw material melting. (3) necking growth: when the temperature of the silicon melt is stable, the seed is slowly immersed in the silicon melt. Because of the thermal stress in the contact between the seed and the silicon melt, the seeds will be dislocation, which must be used to reduce the growth of the crystal. Necking is the seed growth will rapidly upward, the seed crystal grows to a certain size of the reduced diameter (4-6mm) due to the dislocation line and growth axis into a corner, as long as the neck is long enough, the dislocation can grow the crystal surface, zero crystal dislocation.
Q:Manufacturers of solar wafers belong to the photovoltaic industry which specific industry classification below
Polysilicon for chemical, silicon wafer for machining, battery components for semiconductor processing
Q:Monocrystalline silicon processing technology
The use of more than one set of cutting lines is an innovative way to increase the output of the machine under the condition of keeping the speed. The latest MaxEdge system of applied materials company uses a unique set of two independent control cutting components.MaxEdge is the industry's first use of specially designed fine wire secant system, the minimum can reach 80 M. Compared with the HCT B5 wire system applied materials industry leading, these improvements reduce the loss of the silicon material yield up to 50%.Wire system with higher productivity can reduce the number of tools in wafer yield under the same. Therefore, manufacturers can significantly reduce the cost of equipment, operators and maintenance.Reducing the consumption of silicon wafers is directly reducing the cost per watt of solar power.Wire products marketThe silicon wafer suppliers and hope to integrate the crystalline silicon PV module manufacturers to control their own slice process requires the use of wire saw device. Monocrystalline silicon and polycrystalline silicon photovoltaic technology are needed to use it.
Q:Begged monocrystalline silicon rod is to use what tools and equipment to cut into silicon
Common cutting methods for diamond wire cutting and sand cutting
Q:How many watts can a piece of silicon produce
A piece of silicon, has been able to integrate 160 thousand transistors. What a fine project! This is the crystallization of multidisciplinary collaborative efforts, is another milestone in the progress of science and technology.
Q:The metal in the silicon wafer
Monocrystalline silicon or polycrystalline silicon chip to askSilicon is an important semiconductor material, chemical element symbol Si, the silicon used in the electronic industry should have high purity and excellent electrical and mechanical properties. Silicon is one of the largest and most widely used semiconductor materials, and its output and consumption mark the level of a country's electronics industry. In the research and production, silicon materials and silicon devices promote each other. In the Second World War, the use of silicon to produce high-frequency radar crystal detector. The purity of silicon is very low and not single crystal. In 1950, the first silicon transistor was developed to improve the interest of preparing high quality single crystal silicon. Czochralski silicon (CZ) was successfully used in 1952. In 1953, the crucible free zone melting (FZ) method was developed, which can be used for physical purification and single crystal pulling. In 1955, four pure silicon was produced by zinc reduction method, but it could not meet the requirement of manufacturing transistor. In 1956 of hydrogen reduction method of trichlorosilane. The amount of impurities in silicon and after a period of exploration after hydrogen reduction of trichlorosilane method has become a kind of main method.
Q:Light doped and heavily doped silicon wafers
Otherwise, the light is mixed, N++/P++ said heavy doping, no plus is light, thank you

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