Solar Cell High Quality A Grade Cell Polyrystalline 5v 16.2%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.2%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.2%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:How is the silicon chip integrated circuit?
Description: the above process is only an example. The name of the process, in the name of different manufacturers have different. But roughly so. There are some differences between the process of MOS circuit and.
Q:8 inch monocrystalline silicon area?
Generally refers to the round wafer, 8 inch refers to the diameter of 8 inches, "=2.54cm", the area of the circle you will ask for 1.
Q:Why not use N type silicon crystal silicon battery
The first price is high, the N substrate cell conversion efficiency is high, the price is not cheap, good efficiency of P type silicon do not end; second, N doped phosphorus, phosphorus and silicon phase solubility, pull rod phosphorus uneven distribution of P type silicon doped boron, boron and silicon segregation coefficient of equivalent uniform dispersion is easy to control.
Q:I would like to ask the solar cell (silicon) production process is the principle of how
Silicon wafer detectionSilicon wafer is the carrier of solar cell, the quality of silicon wafer directly determines the conversion efficiency of solar cell. This procedure is mainly used to measure the technical parameters of silicon wafer on line. These parameters mainly include the surface roughness of the silicon wafer, the lifetime of the minority, the resistivity, the P/N type and the micro crack. The device is divided into four parts: automatic loading and unloading, silicon wafer transmission, system integration part and. The silicon photovoltaic detector on the silicon wafer surface roughness were detected, and the size and appearance of diagonal parameter detection chip; micro crack detection module is used to detect silicon micro cracks; another two detecting module, one online test module to test wafer resistivity and wafer type, another module for lifetime test wafer. The detection of the diagonal and micro cracks of the silicon wafer is needed before the sub lifetime and resistivity measurement. Wafer inspection equipment can automatic loading and unloading, and substandard products in a fixed position, so as to improve the detection accuracy and efficiency.
Q:Who is the best silicon chip dryer?
In general, the oil bath furnace heating a little more stable, St. steel technology to give me a more profound sense of the sale, the response time is relatively fast, and the service attitude is better, we can be anxious customers anxious.
Q:After the velvet or the original silicon
After the wafer is not cleaned clean, you should be monocrystalline wafers
Q:Why the resistivity of silicon wafer is high and low
For example, after heating resistance and cooling, more or less there will be changes in the normal temperature change, is allowed error.
Q:Wafer cutting will appear thick sheet, I would like to ask what the reasons are
Silicon wafer wire cutting will appear thick sheet, for the following reasons:1, the whole chip thickness:The A. guide slot is not uniform. Wafer thickness = slot steel wire diameter -4 times (SIC) D50, according to the requirements of wafer thickness required, you can calculate the best slot. In addition, because in the cutting process, steel wire wear, steel wire diameter decreases, and the port changed from round to oval, so the guide slot should be compensated according to the loss situation, to ensure the uniformity of wafer thickness.
Q:Is the thickness of solar cell silicon wafer certain? Specifically how much
In fact, the thinner the better, because it is really used to do only 20um PN junction is enough
Q:I would like to ask what the purpose of the use of semiconductor silicon wafers, doped with boron ah?
PN junction has a single conductivity, semiconductor rectifier is made of the characteristics of the PN junction. Such as: large scale integrated circuit is under the high temperature for the impurity required in a certain way (thermal diffusion and ion implantation) incorporated into the silicon wafer surface layer, and make it reach the required quantity and distribution, manufacturing a PN junction, interconnect and ohmic contact to complete.

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