Monocrystalline Silicon Solar Cell/156mm Mono Solar Cell
Main fence wide:1.4-1.5mm back electrode wide：2-2.5mm
Fence line qty：90
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- Q:After the completion of the silicon chip will appear in the shadow of the white spots or what is the situation? How to solve
- Whether or not fully diluted before drying. I couldn't see the actual product.
- Q:Is there anyone who knows how to choose a good glue
- General epoxy resin structural adhesive, fully cured is 24 hours, the purpose of the product to achieve the best bonding strength. The curing time is shortened according to the curing accelerator of epoxy resin. The general market is the fastest solid 5 minutes, you can play a positioning effect. Does not affect operation.
- Q:Ultrasonic cleaning cleaning silicon?
- 3, the silicon wafer cleaning is very important in semiconductor manufacturing process, and the cleaning plate is the most difficult of all cleaning process. Due to the use of silicon ultrasonic cleaning machine, penetration through the physical, the pollution particles from the wafer surface, through mechanical and chemical corrosion of ultrasonic cleaning, the final removal of pollution particles, reached the purpose of wafer cleaning.
- Q:Who is the best silicon chip dryer?
- Silicon wafer drying machine is the Wuxi automation technology to do, that is, before the design of the Song Jiang Yang, now is an upgraded version of the. Easy to use.
- Q:I would like to ask the solar cell (silicon) production process is the principle of how
- Silicon wafer detectionSilicon wafer is the carrier of solar cell, the quality of silicon wafer directly determines the conversion efficiency of solar cell. This procedure is mainly used to measure the technical parameters of silicon wafer on line. These parameters mainly include the surface roughness of the silicon wafer, the lifetime of the minority, the resistivity, the P/N type and the micro crack. The device is divided into four parts: automatic loading and unloading, silicon wafer transmission, system integration part and. The silicon photovoltaic detector on the silicon wafer surface roughness were detected, and the size and appearance of diagonal parameter detection chip; micro crack detection module is used to detect silicon micro cracks; another two detecting module, one online test module to test wafer resistivity and wafer type, another module for lifetime test wafer. The detection of the diagonal and micro cracks of the silicon wafer is needed before the sub lifetime and resistivity measurement. Wafer inspection equipment can automatic loading and unloading, and substandard products in a fixed position, so as to improve the detection accuracy and efficiency.
- Q:Silicon wafer cleaning after the two sides of the upper and lower grille also has a basket of flowers (Bai Yin)
- The occurrence of a single crystal is more obvious, other companies have, this would like to find a solution to find a more proficient in the industry to clean up engineers
- Q:How to calculate the conversion efficiency of monocrystalline silicon
- Proportion of dark current - Irev>6 cell ratioThe proportion of low efficiency tablets - the proportion of P156Eff<14.5% batteries8 inch single crystal conversion rate of about 18.5%; a single conversion rate of about 9 inches in about 18.6%; quasi single crystal (large particles) probably about 18%; the new diamond wire cutting rate can be converted to about 18.92%.
- Q:What is the difference between silicon wafer P111 and P100
- If the crystal is body centered cubic lattice, the crystal orientation through the cube on the diagonal atoms
- Q:The metal in the silicon wafer
- The properties of silicon have excellent electrical properties. The band gap is moderate, and is 1.21 ev. Higher carrier mobility, the electron mobility is 1350 cm / sec / V /, hole mobility is 480 cm / sec / v. The resistivity at room temperature (300K) up to 2.3 x 10 - Europe - cm wide, doped resistivity can be controlled in 10 - to 10 - Europe - cm, can meet the needs of manufacturing various devices. The minority carrier lifetime of the single crystal silicon is longer than that in a few tens of microseconds to 1 milliseconds. Larger thermal conductivity. The chemical property is stable, and is easy to form a stable thermal oxidation film. It can be used to realize the surface passivation and protection of the PN junction in the fabrication of planar silicon devices, and the metal oxide semiconductor structure can be formed to produce MOS field effect transistors and integrated circuits. The properties of the PN junction has good characteristics, so that the silicon device has the advantages of high pressure, the reverse leakage current, high efficiency, long service life, good reliability, good heat conduction, and in the 200 - high temperature operation etc..
- Q:What is the role of the semiconductor wafer
- , in fact, is still relatively soft, before the back of the plasma ETCH will generally have a step UVbake, reinforcement) from the center to the outside of the proliferation of a circle around, until completely flat
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