Solar Cell High Quality A Grade Cell Polyrystalline 5v 16.0%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.0%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.0%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:What's the difference between a silicon wafer and a battery?
Silicon wafers are cut into pieces by wire cutting!The battery pack is a silicon wafer through the surface flocking, diffusion of PN junction, and then PECVD coating
Q:Development trend of monocrystalline silicon wafer
In addition, it is conducive to the healthy development of the photovoltaic industry, is conducive to photovoltaic products into millions of households."LDK LDK is a high-tech photovoltaic enterprise focusing on the research and development, production and sales of solar polysilicon material, ingot and polycrystalline silicon wafer. NYSE Listed Companies in 2008 to achieve sales revenue is expected to reach $1 billion 750 million. The photovoltaic business and become the world's first to enter the "GW club". Total orders exceeded 13GW, becoming the world's largest polysilicon suppliers in hand orders.
Q:Silicon chip cutting, NTC442 machine, a knife can cut the number of slices
Do not stick stick with the United States and the United States, the line will be glued to the line together. With the kind of 3M model of the United States and rubber repair jumper glue will not stick on the line, if the jumper is too much can be inserted in the United States and the United States to close the line has been going to the end.
Q:Why should the wafer cut side, cut out edge Jiaosha
In fact, early silicon is not cutting edge, but with the development of microelectronics industry began the following reasons: cutting edge, W2) i: J n$W% L* M1 s `&;1, n can do a plurality of microelectronic devices on the wafer, cut down, and there is a crystal to crystal growth requirements, cutting along a direction for cutting chaos crack, cleavage is the professional said. The cutting edge tells you the direction of cleavage.2, N type and P type silicon wafer, a standard trimming is also inform you that it is n type or P type electrical characteristics, electrical characteristics, u$J2 z/ h 9 - O3, microelectronics production has been automated, such as lithography exposure if there is no cutting edge positioning, then the mask plate and the chip will be a difference of 180 degrees or a certain location, production efficiency will be very low...,4, the use of a lot of silicon, in addition to n/p also have crystal direction, for example, do MEMS requires corrosion anisotropy will be used <110> crystal direction, and MOS products in order to reduce the influence of the surface state requirements with <100> crystal...
Q:How much is the thickness of the silicon wafer
For integrated circuits: generally 4 inch wafer thickness of 0.520mm, the thickness of the 6 inch wafer
Q:What is the surface hardness of monocrystalline silicon and polycrystalline silicon wafers
At this time, the hardness and elastic modulus of the oxide layer on the surface of monocrystalline silicon wafer were measured, which were about 10.2 GPa and 140.3 GPa, respectively. When the contact depth is about 32 ~ 60NM, silicon wafer contact stiffness and contact depth into a non linear relation between the hardness and elastic modulus increased sharply with the contact depth, show that the hardness and elastic modulus of monocrystalline silicon oxide film surface layer is affected by the matrix material.
Q:After cutting a few chips, mortar density is getting lower and lower
Iron powder and silica fume more and more, the density should be more and more big, unless it is your water content is higher and higher
Q:What are some of the silicon wafer factory
4 polycrystalline casting workshopassistantIngot casting and painting team leaderPolycrystalline operatorCrucible spray, auxiliarySubtotal5 cutting workshop directorDeputy directorassistantCut the monitorRoll monitorCutting and grinding operation staffMulti line monitorMulti line operatorViscose monitorViscose operatorMortar mixerMortar mixing operatorRecorderConsignorSubtotal
Q:I would like to ask what the purpose of the use of semiconductor silicon wafers, doped with boron ah?
High purity silicon wafers for use in electronics and solar energy are required to be doped with boron to manufacture the P end of the P - N junction, in which P (P) - N (As) -, Ga (B) - gallium (III) indium (III) - silicon.
Q:How to deal with silicon wafer annealing
Why anneal? One reason is that silicon contains oxygen, oxygen has the role of absorbing impurities. The oxygen near the surface of the silicon wafer can be removed from the surface during annealing, so as to reduce the number of impurities near the surface. Facilitates device fabrication;Annealing has a certain influence on the resistivity and minority lifetime.For reference.

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