Solar Cell High Quality A Grade Cell Polyrystalline 5v 17.8%

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hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 17.8%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 17.8%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:The metal in the silicon wafer
The properties of silicon have excellent electrical properties. The band gap is moderate, and is 1.21 ev. Higher carrier mobility, the electron mobility is 1350 cm / sec / V /, hole mobility is 480 cm / sec / v. The resistivity at room temperature (300K) up to 2.3 x 10 - Europe - cm wide, doped resistivity can be controlled in 10 - to 10 - Europe - cm, can meet the needs of manufacturing various devices. The minority carrier lifetime of the single crystal silicon is longer than that in a few tens of microseconds to 1 milliseconds. Larger thermal conductivity. The chemical property is stable, and is easy to form a stable thermal oxidation film. It can be used to realize the surface passivation and protection of the PN junction in the fabrication of planar silicon devices, and the metal oxide semiconductor structure can be formed to produce MOS field effect transistors and integrated circuits. The properties of the PN junction has good characteristics, so that the silicon device has the advantages of high pressure, the reverse leakage current, high efficiency, long service life, good reliability, good heat conduction, and in the 200 - high temperature operation etc..
Q:The process for steel wire cutting silicon factory, we use HCTB5 wire, you can do?
Mortar free multi wire cuttingMortar free type multi wire cutting, cutting and cutting sand coexist in the grinding fluid, resulting in low cutting efficiency; and the high viscosity of the coolant and cutting sand and high value of cutting raw materials mixed together, separation is difficult, resulting in the waste of raw materials and environmental pollution.Diamond wire cuttingThe preparation technology of diamond wire belongs to the technology of consolidation abrasive particles. Fixed abrasive wire cutting way between the consolidation in the wire on the abrasive and workpiece material cutting based on the principle of two body wear, abrasive particles directly on the workpiece, which belongs to a kind of rigid cutting method, greatly improves the cutting efficiency.
Q:Silicon rod / wafer processing production
At present, more than 98% of the electronic components are all made of monocrystalline silicon. Among them, the CZ method accounts for about 85%, and the other part is the FZ growth method. Monocrystalline silicon grown by the CZ method for the production of low power integrated circuit components. The FZ method is mainly used in the growth of monocrystalline silicon in high power electronic components. The CZ method is more commonly used than the FZ method in the semiconductor industry, mainly because of its high oxygen content provides the advantages of wafer strengthening.
Q:I would like to ask the solar cell (silicon) production process is the principle of how
Two, the surface of cashmereThe preparation of single crystal silicon wafer is the use of anisotropic etching of silicon on the surface of the silicon per square centimeter to form several million square pyramidal structure, namely, the Pyramid structure. Due to the multiple reflection and refraction of incident light on the surface, the absorption of light is increased, and the short circuit current and conversion efficiency are improved. Anisotropic etching of silicon in alkaline solution liquid is usually hot, available alkali sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc.. Most of them were prepared by using dilute sodium hydroxide solution with a concentration of about 1%, and the corrosion temperature was 70-85. In order to obtain a uniform texture, but also in the solution add alcohols such as ethanol and isopropanol as complexing agent to accelerate the corrosion of silicon. In the preparation of velvet, the silicon chip must be first surface corrosion, alkaline or acidic etching solution to about 20 ~ 25 m, corrosion in the face, the general chemical cleaning. After surface preparation of silicon wafers are not suitable for long-term storage in the water, in order to prevent contamination, should be spread as soon as possible.
Q:Wafer size6 inches and 8 inches only refers to the diameter of monocrystalline silicon?
Refers to the diagonal length of the silicon waferBut you asked the wrong question, the wafer is divided into monocrystalline silicon and polycrystalline silicon wafer, you say is a square of silicon polysilicon film of silicon wafer, you ask in the four corner is a circular arc shape, so you should also count the length of the diagonal right. If not to shape the polysilicon film solution you can search the Internet search look.
Q:Why silicon wafers are made in watts!
A - (Si) amorphous silicon cells usually use high frequency glow discharge method to decompose the silane gas. Due to the low deposition temperature, the film can be deposited on glass, stainless steel plate, ceramic plate and flexible plastic sheet with a thickness of about 1 m, which is easy to large area (05rn * l.0m), and the cost is low. The structure of P in is adopted. In order to improve the efficiency and improve the stability, sometimes also made of three layers of P in multilayer laminated structure, or insert some transition layer. Its commercial production continued to grow, with an annual output capacity of 45MW / A, 10MW production line has been put into production, the global market volume of about 10 million per month, ranking first in the thin film battery. The development of integrated a - Si solar battery components, the use of the effective area of laser cutting is more than 90%, small area conversion efficiency increased to 14.6%, a large production of 8 to 10%, the highest efficiency of the laminated structure is 21%. Research and development trend is to improve the characteristics of the film, the precise design of photocell structure and control the thickness of each layer, improve the interface between the layers of state, in order to achieve high efficiency and high stability.
Q:Who is the best silicon chip dryer?
Heating oil bath furnace and electric heating two ways, our company is now used in the two, it should be said that each has its advantages and disadvantages
Q:How much harm silicon on the human body
Silicon is a semiconductor material, if it is to detect the bare silicon wafer, then there is no harm
Q:After the completion of the silicon chip will appear in the shadow of the white spots or what is the situation? How to solve
Check the cleaning agent is uniform, cleaning time is appropriate
Q:Light doped and heavily doped silicon wafers
Is divided into light heavy doping, which is related to the amount of doping

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