Solar Cell High Quality A Grade Cell Polyrystalline 5v 15.6%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 15.6%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 15.6%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:One hundred watts of solar panels to how many pieces of silicon wafers, 156 of single crystals and polycrystalline
This is not with the number of pieces, crystal silicon solar cell has a feature that is a 0.48-0.6V, called 0.5V, how much you want to V, you can use serial or parallel connection to achieve
Q:What is the cutting fluid for solar wafer cutting?
MB, HCT, NTC and other machines, the requirements of silicon cutting fluid and the proportion of silicon carbide powder is generally controlled at 1:0.92-0.95, mortar density in 1.630-1.635 can be cut quite ideal. Even if there is a greater proportion of proportion, and even mortar density of 1.67 or so will not have any problems, as long as the mortar viscosity control in 200--250 can be. But Ernst machine for mortar density is not higher than 1.57, that is to say 1.55-1.57. can control the viscosity of mortar at around 150, so the domestic silicon cutting fluid will appear in the 1.57 density with mortar, mortar viscosity may be less than 120, and if the mortar viscosity density to 150, more than 1.57, even more than 1.60. The viscosity of mortar is too large, directly will cause the machine alarm, actually influence deeper and may cause the film does not wash clean, burn, or heating of the motor, bearing on the machine itself is very wear.Therefore, the current domestic solar silicon cutting fluid, it is not very suitable for the Ernst & Young machine. The good news is that domestic users have found the defects of the machine, the machine began to replace the mortar pump from the original 0.75KW into 1.5KW, which may solve this problem.
Q:The significance of silicon wafer heat treatment
Heat treatment at 650 DEG C, under the condition of rapid cooling (that is, rapidly over the temperature of 450 DEG C), the thermal donor can be eliminated. That is, we can observe that the resistivity of N sample is high, and the resistivity of P sample is low.Precipitation: 800-1200 DEG C, on behalf of temperature 1050 degrees CHeat treatment at 1050 DEG C, will bring oxygen precipitation, and the formation of defects caused by precipitation defects.Restore: > 1200
Q:Silicon rod / wafer processing production
(4): end shoulder growth after a long thin neck, to reduce the temperature and casting speed, the crystal diameter gradually increased to the desired size. (5) the diameter growth: after a long neck and shoulder end, by continuously adjusting casting speed and temperature, the crystal diameter maintained at between 2mm positive and negative, the diameter of fixed part is called the diameter part. Monocrystalline silicon wafer from the equal diameter part. (6) tail growth: if the rod is separated from the liquid surface, the effect force will cause the dislocation and slip line of the crystal rod. So in order to avoid the occurrence of this problem, the diameter of the crystal rod must be gradually reduced until it is a sharp point and separated from the liquid surface. This process is called tail growth. After a long period of time, the crystal rod is taken out of the furnace chamber for cooling for a period of time to complete a growth cycle.
Q:I would like to ask the solar cell (silicon) production process is the principle of how
Two, the surface of cashmereThe preparation of single crystal silicon wafer is the use of anisotropic etching of silicon on the surface of the silicon per square centimeter to form several million square pyramidal structure, namely, the Pyramid structure. Due to the multiple reflection and refraction of incident light on the surface, the absorption of light is increased, and the short circuit current and conversion efficiency are improved. Anisotropic etching of silicon in alkaline solution liquid is usually hot, available alkali sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc.. Most of them were prepared by using dilute sodium hydroxide solution with a concentration of about 1%, and the corrosion temperature was 70-85. In order to obtain a uniform texture, but also in the solution add alcohols such as ethanol and isopropanol as complexing agent to accelerate the corrosion of silicon. In the preparation of velvet, the silicon chip must be first surface corrosion, alkaline or acidic etching solution to about 20 ~ 25 m, corrosion in the face, the general chemical cleaning. After surface preparation of silicon wafers are not suitable for long-term storage in the water, in order to prevent contamination, should be spread as soon as possible.
Q:How do we use the scanning electron microscope
After wiping with cotton wool, wash ear ball can be dried.Some of the words can be placed in alcohol solution ultrasonic cleaning, the effect is almost.
Q:What is a good solar wafer testing equipment?
PL-- detection of micro cracks, black spots, black and other issuesWafer sorting - Detection AOI, PN, resistivity, thickness, lifetime, stria depth
Q:After cutting a few chips, mortar density is getting lower and lower
PEG water absorption is very strong, as long as the air humidity is slightly higher, then did not cut the water content of a mortar on the rise, as well as the viscosity of mortar and mortar temperature is related to the temperature difference, the viscosity of mortar to a difference of about 10
Q:After wafer cleaning, how to change the film?
Quality solutionCleaning method(a) RCA cleaning:RCA pioneered by Werner Kern in the N.J.Princeton RCA laboratory in 1965, and hence the name.RCA cleaning is a typical wet chemical cleaning.RCA cleaning is mainly used for cleaning the surface film, organic particles and metal contamination.1, particle cleaningThe main APM removal of silicon surface particles (also known as SC1) cleaning solution (NH4OH + H2O2 + H2O) to APM in the cleaning. The cleaning solution, due to the effects of H2O2, the silicon surface has a layer of natural oxide film (SiO2), a hydrophilic surface and between silicon particles can soaking cleaning liquid, silicon surface the natural oxide film and a silicon wafer surface by NH4OH corrosion, the particles will fall into the cleaning solution. The corrosion rate and the particle removal amount of silicon surface, for removing particles, corrosion must be a certain amount. In the cleaning solution, because the potential of silicon surface is negative, and most of the particles are repulsive force to prevent the adsorption of particles to the silicon surface.
Q:What does TTV mean in silicon wafer production?
TTV is "total thickness variation" acronym or abbreviation, meaning total thickness variation, total thickness deviation.There is a method to measure the consistency of the thickness of silicon wafer, which is called the total thickness deviation (TTV)

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