Specifications

Thin film solar system energy yield per Wp can be 10% higher than that of silicon solar system due to material characterics.

Amorphous silicon thin film solar panel, with TUV/ UL/ CE/ RoHS/ IEC/ CQC/ ISO/ SFEC/ CEC approval.Framed by black anodized aluminium, easy to fix or made into free standing type. AmpleSun ASF series have many advantages with high quality production process and raw materials:

General advantages:

1. Good environment adaptability, less sensitive to installation angle, more suitable for vertical installation in BIPV.

2. Excellent performance.

3. 30% lighter than double-glass type.

4. Framed with aluminium makes ASF more solid.

5. Good looking, well match the buildings or as a constituent part.

6. Free from defects for 5 year with regular use, maintain more than 90% of Max. power for 10 years and 80% for 25 years.

Technical advantages:

1. Low temperature coefficient:

Normally, the electricity performance of photovoltaic module is measured by STC standard. However, the temperature of solar module, operating in the sun, can be much higher than atmosphere temperature.

With the temperature increase, module power will decrease accordingly. Temperature coefficient for thin film silicon solar cell is 0.2%/0c, and that of crystalline solar cell is -0.5%/0c. That means, when the module is worked on 500c condition, compare to the efficiency reached on 250c test standard , thin film silicon solar module will loose around 5%, and the loss for crystalline will be around 12.5%.

In conclusion, even the STC efficiency of thin film silicon solar cell is low, the efficiency in actual operation condition is not far away to that of crystalline solar cell.

2. Good weak light performance:

The performance of thin film silicon solar cell is better than that of crystalline solar cell in the weak light condition.

Solar power system with crystalline solar module will not generate power in the late afternoon. However, solar power system with thin film silicon solar cell still generates power.

Furthermore, thin film silicon has gentle current-voltage curve. This characteristic makes it easier to pick-up the most electricity power.

Brief introduction of  Thin Film Solar Cell

Thin film solar cells can be made up with inexpensive ceramics, graphite, metal sheets of different materials as substrates. The film thickness can be formed to generate a voltage of just a few μm; the highest conversion efficiency of the thin film solar cell can be up to 13% currently.

Physical Advantage of Thin Film Solar Cell

Now the main material of thin film solar cell is silicon. In the share of the cost of the finished solar cells, silicon materials accounted for nearly 40%. The thickness of amorphous silicon solar cells is less than 1μm, which is less than 1/100 of the thickness of crystalline silicon solar cells, reducing the manufacturing cost greatly. Since the amorphous silicon solar cell manufacturing low temperature (-200 ℃), is easy to realize the advantages of a large area, so that it takes primacy in the thin film solar cell, the manufacturing methods in electron cyclotron resonance method, photochemical vapor deposition method, DC glow discharge, radio frequency glow discharge method, sputtering method and Xie hot-wire method. Especially the RF glow discharge method because of its low temperature process (-200 ℃), easy to implement large-scale and high-volume continuous production, is now internationally recognized as a mature technology. Especially the RF glow discharge method because of its low temperature process (-200 ℃), easy to implement large-scale and high-volume continuous production, is now internationally recognized as a mature technology. In materials research, has studied a-SiC window layer, graded interface layer, μC-SiC p layer, etc., and significantly improves the short-wave spectral response of the cell. This is due to the a-Si solar photo-generated carriers generated mainly in an i-layer, i-layer before reaching the incident light is absorbed by the p-layer portion of the power is invalid. The a-SiC and μC-SiC material than the p-type a-Si has a wider optical band gap, thus reducing the absorption of light that reaches the light increases the i-layer; gradient interface layer coupled with improved a- transport properties of SiC / a-Si heterojunction interface photoelectrons in response to increase in the long-wave, using a suede TCO film, a multi-layer suede back reflection electrode (ZnO / Ag / Al) and multi-bandgap stacked structure, That glass / TCO / p1i1n1 / p2i2n2 / p3i3n3 / ZnO / Ag / Al structure. Suede TCO film and the electrode multilayer back reflector reduces light reflection and transmission losses and an increase in the propagation of light from the i layer, thereby increasing the light absorption in the i-layer multi-band-gap structure, with the i-layer gap width begin to gradually decrease from the light incident direction to absorb sunlight segment reached broaden the spectral response, the purpose of improving the conversion efficiency. Improving the efficiency of the battery stack also features graded bandgap design, tunnel junctions of microcrystalline doped layer, so as to improve the carrier collection.