Solar Cell High Quality A Grade Cell Polyrystalline 5v 16.8%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.8%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.8%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:How to do on the silicon wafer
The general use of ultrasonic and pre cleaning (pickling) can be solved
Q:Why should the wafer cut side, cut out edge Jiaosha
In fact, early silicon is not cutting edge, but with the development of microelectronics industry began the following reasons: cutting edge, W2) i: J n$W% L* M1 s `&;1, n can do a plurality of microelectronic devices on the wafer, cut down, and there is a crystal to crystal growth requirements, cutting along a direction for cutting chaos crack, cleavage is the professional said. The cutting edge tells you the direction of cleavage.2, N type and P type silicon wafer, a standard trimming is also inform you that it is n type or P type electrical characteristics, electrical characteristics, u$J2 z/ h 9 - O3, microelectronics production has been automated, such as lithography exposure if there is no cutting edge positioning, then the mask plate and the chip will be a difference of 180 degrees or a certain location, production efficiency will be very low...,4, the use of a lot of silicon, in addition to n/p also have crystal direction, for example, do MEMS requires corrosion anisotropy will be used <110> crystal direction, and MOS products in order to reduce the influence of the surface state requirements with <100> crystal...
Q:Wafer cutting will appear thick sheet, I would like to ask what the reasons are
Solving measures:A. guide slot check slot is uniform, and to compensate for the loss according to the situation of the slot wheel.When the A. is set to zero, the position of the guide line is controlled.B. standard viscose operation. When the surface of the silicon block is bonded with the guide bar, the utility model can be used to check whether the guide strip is bent, and whether the glue is evenly applied, so that there is no gap between the guide strip and the silicon block after the bonding guide strip is arranged.In the process of using the C. guide wheel, the utility model is used to detect the guide groove of the guide wheel on a regular basis, and the depth and the angle of the guide groove are observed.
Q:Why integrated circuits are rectangular and the silicon chips are round
The disk that you see is a wafer. This disk is not only the production of a chip, but N multiple chips are produced in this disk.
Q:After wafer cleaning, how to change the film?
Quality solutionCleaning method(a) RCA cleaning:RCA pioneered by Werner Kern in the N.J.Princeton RCA laboratory in 1965, and hence the name.RCA cleaning is a typical wet chemical cleaning.RCA cleaning is mainly used for cleaning the surface film, organic particles and metal contamination.1, particle cleaningThe main APM removal of silicon surface particles (also known as SC1) cleaning solution (NH4OH + H2O2 + H2O) to APM in the cleaning. The cleaning solution, due to the effects of H2O2, the silicon surface has a layer of natural oxide film (SiO2), a hydrophilic surface and between silicon particles can soaking cleaning liquid, silicon surface the natural oxide film and a silicon wafer surface by NH4OH corrosion, the particles will fall into the cleaning solution. The corrosion rate and the particle removal amount of silicon surface, for removing particles, corrosion must be a certain amount. In the cleaning solution, because the potential of silicon surface is negative, and most of the particles are repulsive force to prevent the adsorption of particles to the silicon surface.
Q:What are the difficulties of silicon wafer cutting?
During the cutting process, the wafer quality and rate of finished products played a major role in the grain type, viscosity of silicon carbide powder cutting fluid and particle size, the viscosity of mortar, mortar flow, steel wire speed and wire tension and workpiece feed speed.TTV: and TTV stria stria and is a headache in the wafer processing, from time to time there will be a knife, impossible to guard against. TTV is when the knife into the line, and is easy to appear in the time line bow.
Q:Process flow of wafer wafer ultrasonic cleaning machine?
Solar silicon wafer surface plasma cleaning processResidual plasma cleaning method of particles on silicon wafer surface, which comprises the following steps: firstly, gas flushing process, and then the gas plasma glow. The plasma cleaning method for removing particles of silicon surface easy control, thorough cleaning, no residual reactants, the process gas, non-toxic, low cost, small amount of labor, work efficiency high.
Q:Solar silicon wafer cutting fluid can burn explosion?
2, the glass can not be used as the bearing plate of the crystal rod, if the use of graphite plate, grinding down the silicon powder containing a certain amount of graphite, it is difficult to deal with the recovery of silica fume3, can only be used for single crystal cutting4, the cost of the problem, and now the price of diamond wire fell faster, diamond wire cutting costs should be close to the cost of cutting free abrasive
Q:Is solar silicon wafer often harmful to the body?
Silicon is the main component of Si, is the most widely distributed on the earth, the most abundant storage materials
Q:The relationship between the weight and the power of solar wafers!
156*156,8 inch polysilicon chip Accounting: efficiency of 16%, the thickness of the silicon chip is 180, corresponding to the amount of polysilicon per watt on the map is 7G.

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