Solar Cell High Quality A Grade Cell Polyrystalline 5v 16.6%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.6%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Polyrystalline 5v 16.6%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:The process for steel wire cutting silicon factory, we use HCTB5 wire, you can do?
Electroplated diamond wireWith high tensile strength, the strength of electroplated diamond wire is more than 110% of the original strand strength. The technical problem of electroplating line embrittlement caused by plating induced tensile stress is solved successfully.
Q:Why do you want to make the wafer bigger?
The cost of the chip is directly related to the area. On the same chip, the more chips can be carved, the lower the price of the chip. Because silicon chips are inevitably produced defects (such as impurities, etc.). The larger the area of a chip, the higher the probability of the collision, and the higher the proportion of the whole wafer. A chip to do one hundred chips, a defect is 1\%. If only do ten, out of a defect is 10\%. An extreme example is the large CCD, professional camera or digital camera with the CCD is 23.7x15.6mm, light by the light area of 370 square millimeters, quickly catch up with the area of the high-end RISC processor
Q:Wafer size6 inches and 8 inches only refers to the diameter of monocrystalline silicon?
Refers to the diagonal length of the silicon waferBut you asked the wrong question, the wafer is divided into monocrystalline silicon and polycrystalline silicon wafer, you say is a square of silicon polysilicon film of silicon wafer, you ask in the four corner is a circular arc shape, so you should also count the length of the diagonal right. If not to shape the polysilicon film solution you can search the Internet search look.
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
Because monocrystalline silicon and the battery is not a quadrilateral, so the 125 refers to the length of a single crystal square
Q:How to make monocrystalline silicon solar cells
Surface fleeceThe preparation of single crystal silicon wafer is the use of anisotropic etching of silicon on the surface of the silicon per square centimeter to form several million square pyramidal structure, namely, the Pyramid structure. Due to the multiple reflection and refraction of incident light on the surface, the absorption of light is increased, and the short circuit current and conversion efficiency are improved. Anisotropic etching of silicon in alkaline solution liquid is usually hot, available alkali sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc.. Most of them were prepared by using dilute sodium hydroxide solution with a concentration of about 1%, and the corrosion temperature was 70-85. In order to obtain a uniform texture, but also in the solution add alcohols such as ethanol and isopropanol as complexing agent to accelerate the corrosion of silicon. In the preparation of velvet, the silicon chip must be first surface corrosion, alkaline or acidic etching solution to about 20 ~ 25 m, corrosion in the face, the general chemical cleaning. After surface preparation of silicon wafers are not suitable for long-term storage in the water, in order to prevent contamination, should be spread as soon as possible.
Q:After wafer cleaning, how to change the film?
2, surface metal cleaning(1) HPM (SC22) cleaning (2) DHF cleaningMetal contamination of silicon surface has two kinds of adsorption and desorption mechanism: (1) compared with the negatively charged silicon high metal such as Cu, Ag, Au, from the silicon surface to capture electron on the surface of the silicon direct formation of chemical bonds. Has a high redox potential of the solution to obtain electrons from these metals, resulting in metal the ionized form dissolved in the solution, so that this type of metal removed from the silicon surface. (2) compared with the negatively charged silicon low metal, such as Fe, Ni, Cr, Al, Ca, Na, K can be easily ionized in solution and deposited on the silicon wafer surface natural oxide film or a chemical oxide film on these metals in dilute HF solution with a natural oxide film or a chemical oxide film is easily removed.3, organic cleaningThe removal of organic silicon surface cleaning fluid used is SPM.SPM with high oxidative capacity, metal oxide can be dissolved in solution, and the oxidation of organic compounds to produce CO2 and.SPM cleaning water can remove the surface of silicon wafer heavy organic contamination and some metal, but when organic contamination is heavy will make carbonization of organic matter and difficult to remove by SPM. After cleaning, the silicon surface residual sulfide, the sulfide particles is difficult to use to water wash out.
Q:Process flow of wafer wafer ultrasonic cleaning machine?
Solar silicon wafer surface plasma cleaning processResidual plasma cleaning method of particles on silicon wafer surface, which comprises the following steps: firstly, gas flushing process, and then the gas plasma glow. The plasma cleaning method for removing particles of silicon surface easy control, thorough cleaning, no residual reactants, the process gas, non-toxic, low cost, small amount of labor, work efficiency high.
Q:Pure curiosity why silicon wafer is round
Why does the silicon grown in the melt not directly cut into square, it is not easy to put it......Rub... In order to reduce costs ah.
Q:Is the thickness of solar cell silicon wafer certain? Specifically how much
The rest is just the substrate, it doesn't work. Do not understand, then you can look at the film thickness of the battery, you will understand.
Q:Solar silicon wafer cutting fluid can burn explosion?
2, the glass can not be used as the bearing plate of the crystal rod, if the use of graphite plate, grinding down the silicon powder containing a certain amount of graphite, it is difficult to deal with the recovery of silica fume3, can only be used for single crystal cutting4, the cost of the problem, and now the price of diamond wire fell faster, diamond wire cutting costs should be close to the cost of cutting free abrasive

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