Solar Cell High Quality A Grade Cell Monorystalline 5v 18.4%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 18.4%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 18.4%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:8 inch monocrystalline silicon area?
Generally refers to the round wafer, 8 inch refers to the diameter of 8 inches, "=2.54cm", the area of the circle you will ask for 1.
Q:The metal in the silicon wafer
Monocrystalline silicon or polycrystalline silicon chip to askSilicon is an important semiconductor material, chemical element symbol Si, the silicon used in the electronic industry should have high purity and excellent electrical and mechanical properties. Silicon is one of the largest and most widely used semiconductor materials, and its output and consumption mark the level of a country's electronics industry. In the research and production, silicon materials and silicon devices promote each other. In the Second World War, the use of silicon to produce high-frequency radar crystal detector. The purity of silicon is very low and not single crystal. In 1950, the first silicon transistor was developed to improve the interest of preparing high quality single crystal silicon. Czochralski silicon (CZ) was successfully used in 1952. In 1953, the crucible free zone melting (FZ) method was developed, which can be used for physical purification and single crystal pulling. In 1955, four pure silicon was produced by zinc reduction method, but it could not meet the requirement of manufacturing transistor. In 1956 of hydrogen reduction method of trichlorosilane. The amount of impurities in silicon and after a period of exploration after hydrogen reduction of trichlorosilane method has become a kind of main method.
Q:Polished silicon wafers can be most SEM substrates
In other words, only nano materials will consider the use of polished silicon wafer sample carrier. Micron submicron level, waste, direct double-sided conductive adhesive tape can be.
Q:Silicon rod / wafer processing production
At present, more than 98% of the electronic components are all made of monocrystalline silicon. Among them, the CZ method accounts for about 85%, and the other part is the FZ growth method. Monocrystalline silicon grown by the CZ method for the production of low power integrated circuit components. The FZ method is mainly used in the growth of monocrystalline silicon in high power electronic components. The CZ method is more commonly used than the FZ method in the semiconductor industry, mainly because of its high oxygen content provides the advantages of wafer strengthening.
Q:What is the silicon area of the 125 diagonal of a single crystal of 160?
Because monocrystalline silicon and the battery is not a quadrilateral, so the 125 refers to the length of a single crystal square
Q:How to extract silicon from silicon wafers
Slice: cut a single crystal silicon rod into a thin wafer with an exact geometry. In this process, the silica fume is produced by water leaching to produce waste water and silicon slag.
Q:What to do with silicon. What is the relationship between the semiconductor and the PCB board
This problem may be more profound understanding of microelectronics.I am learning communication, simply say my understandingPure silicon wafer conductivity is relatively weak. But the incorporation of trivalent impurities or pentavalent after a carrier (free electrons or holes) and semiconductors. The electrical conductivity of semiconductors and the type of doping, the concentration and process. Knowledge of semiconductor doping analog electronic circuits on the textbook.
Q:After wafer cleaning, how to change the film?
2, surface metal cleaning(1) HPM (SC22) cleaning (2) DHF cleaningMetal contamination of silicon surface has two kinds of adsorption and desorption mechanism: (1) compared with the negatively charged silicon high metal such as Cu, Ag, Au, from the silicon surface to capture electron on the surface of the silicon direct formation of chemical bonds. Has a high redox potential of the solution to obtain electrons from these metals, resulting in metal the ionized form dissolved in the solution, so that this type of metal removed from the silicon surface. (2) compared with the negatively charged silicon low metal, such as Fe, Ni, Cr, Al, Ca, Na, K can be easily ionized in solution and deposited on the silicon wafer surface natural oxide film or a chemical oxide film on these metals in dilute HF solution with a natural oxide film or a chemical oxide film is easily removed.3, organic cleaningThe removal of organic silicon surface cleaning fluid used is SPM.SPM with high oxidative capacity, metal oxide can be dissolved in solution, and the oxidation of organic compounds to produce CO2 and.SPM cleaning water can remove the surface of silicon wafer heavy organic contamination and some metal, but when organic contamination is heavy will make carbonization of organic matter and difficult to remove by SPM. After cleaning, the silicon surface residual sulfide, the sulfide particles is difficult to use to water wash out.
Q:I grew Ag particles on a silicon wafer, about a few hundred nanometers in size
Finish drying, look at the actual situation on the electronic microscope. If the results can not be adjusted according to the situation of sample preparation.
Q:The relationship between the weight and the power of solar wafers!
The thickness of the silicon wafer is unchanged and the weight is unchanged:156*156,8 inch polycrystalline silicon chip efficiency reached 16%, single-chip power of 3.89W.This can be pushed: the thickness of the silicon wafer is 180, the efficiency is up to 16%, and the consumption of the single silicon is 3.89w*7g/w=27.23g.When the thickness of silicon wafer is 180, and the weight of silicon wafer is unchanged, the conversion rate of polycrystalline silicon chip is up to 18%, and the chip power is 156*156*0.18/1000=4.38WThis can be pushed: the thickness of the silicon wafer is 180, the weight of the silicon wafer is unchanged, and the conversion rate of the polycrystalline silicon sheet is up to 18%, and the polysilicon consumption per watt is 27.23/4.38=6.2g

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