Solar Cell High Quality A Grade Cell Monorystalline 5v 17.8%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.8%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.8%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:What is the use of silicon?
The domestic semiconductor leader GRINM (600206) general manager Zhou Qigang told reporters that the original price is less than $30 per kilogram of raw materials of polysilicon, now prices rose to about $110 per kilogram, affected by this, GRINM 2005 production costs increased by 30 million yuan.Zhou Qigang believes that the culprit is the price of polysilicon solar cells. Because of the global crude oil prices, rising demand for new energy in Europe and the United States, these countries have taken measures to encourage the development of solar energy, the solar energy industry is booming, leading to the surge in demand for polysilicon.
Q:Why the resistivity of silicon wafer is high and low
For example, after heating resistance and cooling, more or less there will be changes in the normal temperature change, is allowed error.
Q:Ultrasonic cleaning cleaning silicon?
1, silicon wafer wafer ultrasonic cleaning function.2, cleaning the wafer production process, pollutants using ultrasonic cleaning machine effectively remove organic matter, wafer surface particles and metal impurities, natural oxide layer and quartz, plastic containers and accessories, the wafer surface damage characteristics. According to different cleaning process, the corresponding cleaning unit is equipped with independent control.
Q:Seeking for the video: manual insert silicon wafer single crystal insert method
I'll tell you how to find the tab! First bring gloves put water, the water level must be submerged inserted cassette cleaning or oxidation film will not wash clean
Q:How is the wafer appearance caused? The performance of the chip half white, a class of black! Seek help!
You should be the color difference problem is caused by the mortar temperature cutting room temperature and workshop temperature also influenced to reduce this effect only from the cleaning rod to minimize the time spent between, this is the enthusiasm of the staff problem
Q:What is the difference between the purpose of wafer cleaning and the cleaning of silicon material, what is the difference between the acid used
The silicon wafer cleaning is also known as the production of wool, chemical etching of silicon wafer surface, so that the light area
Q:I would like to ask the solar cell (silicon) production process is the principle of how
Two, the surface of cashmereThe preparation of single crystal silicon wafer is the use of anisotropic etching of silicon on the surface of the silicon per square centimeter to form several million square pyramidal structure, namely, the Pyramid structure. Due to the multiple reflection and refraction of incident light on the surface, the absorption of light is increased, and the short circuit current and conversion efficiency are improved. Anisotropic etching of silicon in alkaline solution liquid is usually hot, available alkali sodium hydroxide, potassium hydroxide, lithium hydroxide and ethylenediamine etc.. Most of them were prepared by using dilute sodium hydroxide solution with a concentration of about 1%, and the corrosion temperature was 70-85. In order to obtain a uniform texture, but also in the solution add alcohols such as ethanol and isopropanol as complexing agent to accelerate the corrosion of silicon. In the preparation of velvet, the silicon chip must be first surface corrosion, alkaline or acidic etching solution to about 20 ~ 25 m, corrosion in the face, the general chemical cleaning. After surface preparation of silicon wafers are not suitable for long-term storage in the water, in order to prevent contamination, should be spread as soon as possible.
Q:Silicon wafer cleaning after the two sides of the upper and lower grille also has a basket of flowers (Bai Yin)
You don't think about it, because it's not a simple process parameter, what is the material, is a comprehensive problem of Chemical Physics
Q:There is a micro structure on the side of the silicon wafer
It is a milestone in the progress of science and technology that 160 thousand transistors have been integrated on a large grain of silicon.
Q:What is the meaning of a cleaning in a semiconductor silicon wafer process? RCA?
() SPM:H2SO4 /H2O2 120 to 150 DEG C SPM has a high oxidation capacity, can be dissolved in the metal oxidation solution, and the oxidation of organic matter to generate CO 2 and H2O. The use of SPM to clean silicon wafers can remove heavy organic contaminants and some metals on the surface of silicon wafer, but it is difficult to remove organic matter when organic matter is particularly serious.

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