Solar Cell High Quality A Grade Cell Monorystalline 5v 17.8%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.8%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.8%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:Why the resistivity of silicon wafer is high and low
If the thermistor is more normal. For example, when you hold your hands
Q:What is a silicon chip made of?
The silicon rod pulling ingot is finished, the silicon wafer, and then processed to solar cell sheet, processing factory is finished, then the solar street lamp assembly
Q:Why should the wafer cut side, cut out edge Jiaosha
In fact, early silicon is not cutting edge, but with the development of microelectronics industry began the following reasons: cutting edge, W2) i: J n$W% L* M1 s `&;1, n can do a plurality of microelectronic devices on the wafer, cut down, and there is a crystal to crystal growth requirements, cutting along a direction for cutting chaos crack, cleavage is the professional said. The cutting edge tells you the direction of cleavage.2, N type and P type silicon wafer, a standard trimming is also inform you that it is n type or P type electrical characteristics, electrical characteristics, u$J2 z/ h 9 - O3, microelectronics production has been automated, such as lithography exposure if there is no cutting edge positioning, then the mask plate and the chip will be a difference of 180 degrees or a certain location, production efficiency will be very low...,4, the use of a lot of silicon, in addition to n/p also have crystal direction, for example, do MEMS requires corrosion anisotropy will be used <110> crystal direction, and MOS products in order to reduce the influence of the surface state requirements with <100> crystal...
Q:The higher the resistivity of silicon wafers, the better?!!
Weak questions: why single crystal resistivity in about 1 would be better?
Q:What is the role of the semiconductor wafer
You can see when the glue drops to the Wafer on a drop of liquid (uniform after the high temperature treatment, evaporation of moisture, stereotypes, said to be solid
Q:Why is it not easy to use high resistance on the silicon chip integrated circuit
It is not easy to use high resistance on silicon wafer because of the resistance on silicon wafer,
Q:Why do you use a concentrated sulfuric acid and hydrogen peroxide to wash silicon?
Because of the use of sand when the recovery of mortar used too much, resulting in increased viscosity and organic impurities
Q:What are some of the silicon wafer factory
4 polycrystalline casting workshopassistantIngot casting and painting team leaderPolycrystalline operatorCrucible spray, auxiliarySubtotal5 cutting workshop directorDeputy directorassistantCut the monitorRoll monitorCutting and grinding operation staffMulti line monitorMulti line operatorViscose monitorViscose operatorMortar mixerMortar mixing operatorRecorderConsignorSubtotal
Q:How to make the photoresist and silicon substrate adhesion better
PR and the same solvent for the HMDS can be better combination, adhesion will be better, will not produce bubble. You can search the TOK OAP material. That's what it's supposed to be
Q:After wafer cleaning, how to change the film?
2, surface metal cleaning(1) HPM (SC22) cleaning (2) DHF cleaningMetal contamination of silicon surface has two kinds of adsorption and desorption mechanism: (1) compared with the negatively charged silicon high metal such as Cu, Ag, Au, from the silicon surface to capture electron on the surface of the silicon direct formation of chemical bonds. Has a high redox potential of the solution to obtain electrons from these metals, resulting in metal the ionized form dissolved in the solution, so that this type of metal removed from the silicon surface. (2) compared with the negatively charged silicon low metal, such as Fe, Ni, Cr, Al, Ca, Na, K can be easily ionized in solution and deposited on the silicon wafer surface natural oxide film or a chemical oxide film on these metals in dilute HF solution with a natural oxide film or a chemical oxide film is easily removed.3, organic cleaningThe removal of organic silicon surface cleaning fluid used is SPM.SPM with high oxidative capacity, metal oxide can be dissolved in solution, and the oxidation of organic compounds to produce CO2 and.SPM cleaning water can remove the surface of silicon wafer heavy organic contamination and some metal, but when organic contamination is heavy will make carbonization of organic matter and difficult to remove by SPM. After cleaning, the silicon surface residual sulfide, the sulfide particles is difficult to use to water wash out.

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