Solar Cell High Quality A Grade Cell Monorystalline 5v 17.4%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.4%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.4%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:After the completion of the silicon chip will appear in the shadow of the white spots or what is the situation? How to solve
Whether or not fully diluted before drying. I couldn't see the actual product.
Q:What are the difficulties of silicon wafer cutting?
During the cutting process, the wafer quality and rate of finished products played a major role in the grain type, viscosity of silicon carbide powder cutting fluid and particle size, the viscosity of mortar, mortar flow, steel wire speed and wire tension and workpiece feed speed.TTV: and TTV stria stria and is a headache in the wafer processing, from time to time there will be a knife, impossible to guard against. TTV is when the knife into the line, and is easy to appear in the time line bow.
Q:How much a piece of silicon on the board
The same power, the conversion rate of the area is small, or vice versa. If you do not consider the area, the same power, the amount of electricity generated is the same, with the high conversion rate and the low rate of change, of course, there will be some impact on life expectancy. I do not know so clear? I is a professional manufacturer of solar photovoltaic, do not understand what I can find, you can.
Q:How to make the photoresist and silicon substrate adhesion better
PR and the same solvent for the HMDS can be better combination, adhesion will be better, will not produce bubble. You can search the TOK OAP material. That's what it's supposed to be
Q:What is the price of monocrystalline silicon
The content of silicon in the earth's crust is 25.8%, which provides an inexhaustible source for the production of monocrystalline silicon. Because silicon is one of the most abundant elements in the earth, the solar battery that destined to enter the mass market (mass market) products, reserves of advantage is to become one of the reasons the main photovoltaic silicon materials.
Q:Why should the wafer cut side, cut out edge Jiaosha
In fact, early silicon is not cutting edge, but with the development of microelectronics industry began the following reasons: cutting edge, W2) i: J n$W% L* M1 s `&;1, n can do a plurality of microelectronic devices on the wafer, cut down, and there is a crystal to crystal growth requirements, cutting along a direction for cutting chaos crack, cleavage is the professional said. The cutting edge tells you the direction of cleavage.2, N type and P type silicon wafer, a standard trimming is also inform you that it is n type or P type electrical characteristics, electrical characteristics, u$J2 z/ h 9 - O3, microelectronics production has been automated, such as lithography exposure if there is no cutting edge positioning, then the mask plate and the chip will be a difference of 180 degrees or a certain location, production efficiency will be very low...,4, the use of a lot of silicon, in addition to n/p also have crystal direction, for example, do MEMS requires corrosion anisotropy will be used <110> crystal direction, and MOS products in order to reduce the influence of the surface state requirements with <100> crystal...
Q:Why not use N type silicon crystal silicon battery
N type silicon wafer from the raw material price or quantity, and P type silicon wafer or some gap. This also led to the battery chip manufacturers for N battery has been in the laboratory stage, not mass production.Again, the P type battery is to take GA or boron, but the N type batteries into another material, I am not very clear, not engage in technology, huh, huh, huh, huh.The above information, I hope to help you.
Q:Silicon wafer cleaning after the two sides of the upper and lower grille also has a basket of flowers (Bai Yin)
The occurrence of a single crystal is more obvious, other companies have, this would like to find a solution to find a more proficient in the industry to clean up engineers
Q:Light doped and heavily doped silicon wafers
Is divided into light heavy doping, which is related to the amount of doping
Q:I grew Ag particles on a silicon wafer, about a few hundred nanometers in size
Alcohol is usually placed inside, with ultrasonic cleaning instrument scattered about, the purpose is to make the particles do not reunite together.

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