Solar Cell High Quality A Grade Cell Monorystalline 5v 17.2%

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Specifications

hot sale solar cell 
1.16.8%~18.25% high efficiency 
2.100% checked quality 
3.ISO9001/ISO14001/TUV/CE/UL 
4.stable performance 


We can offer you the best quality products and services, don't miss !

 

POLY6'(156*156)

Polycrystalline Silicon Solar cell

 

Physical  Characteristics   

 

Dimension:     156mm×156mm±0.5mm

Diagonal:          220mm±0.5mm

Thickness(Si):  200±20 μm

 

Front(-)                                                              Back(+)

Blue anti-reflecting coating (silicon nitride);            Aluminum back surface field;

1.5mm wide bus bars;                                            2.0mm wide soldering pads;

Distance between bus bars: 51mm .                     Distance between bus bars :51mm .

 

Electrical Characteristics 

Efficiency(%)

18.00

17.80

17.60

17.40

17.20

16.80

16.60

16.40

16.20

16.00

15.80

15.60

Pmpp(W)

4.33

4.29

4.24

4.19

4.14

4.09

4.04

3.99

3.94

3.90

3.86

3.82

Umpp(V)

0.530

0.527

0.524

0.521

0.518

0.516

0.514

0.511

0.509

0.506

0.503

0.501

Impp(A)

8.159

8.126

8.081

8.035

7.990

7.938

7.876

7.813

7.754

7.698

7.642

7.586

Uoc(V)

0.633

0.631

0.628

0.625

0.623

0.620

0.618

0.617

0.615

0.613

0.611

0.609

Isc(A)

8.709

8.677

8.629

8.578

8.531

8.478

8.419

8.356

8.289

8.220

8.151

8.083

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.2%


MONO5'(125*125mm)165

Monocrystalline silicon solar cell

 

Physical  Characteristics 

Dimension: 125mm×125mm±0.5mm

Diagonal: 165mm±0.5mm

Thickness(Si): 200±20 μm

 

Front(-)                                                                         Back(+)                                                                                                                                                                                                                                    

Blue anti-reflecting coating(silicon nitride);                        Aluminum back surface field;

1.6mmwide bus bars;                                                        2.5mm wide soldering pads;

Distance between bus bars: 61mm .                                Distance between bus bars :61mm .

 

Electrical Characteristics 

 

Efficiency(%)

19.40

19.20

19.00

18.80

18.60

18.40

18.20

18.00

17.80

17.60

17.40

17.20

Pmpp(W)

2.97

2.94

2.91

2.88

2.85

2.82

2.79

2.76

2.73

2.70

2.67

2.62

Umpp(V)

0.537

0.535

0.533

0.531

0.527

0.524

0.521

0.518

0.516

0.515

0.513

0.509

Impp(A)

5.531

5.495

5.460

5.424

5.408

5.382

5.355

5.328

5.291

5.243

5.195

4.147

Uoc(V)

0.637

0.637

0.636

0.635

0.633

0.630

0.629

0.629

0.628

0.626

0.626

0.625

Isc(A)

5.888

5.876

5.862

5.848

5.839

5.826

5.809

5.791

5.779

5.756

5.293

5.144

 

Solar Cell High Quality  A Grade Cell Monorystalline 5v 17.2%

 

FAQ:

Q:How can i get some sample?

A:Yes , if you want order ,sample is not a problem.

 

Q:How about your solar panel efficency?

A: Our product  efficency  around 17.25%~18.25%.

 

Q:What’s the certificate you have got?

A: we have overall product certificate of ISO9001/ISO14001/CE/TUV/UL


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Q:The metal in the silicon wafer
Monocrystalline silicon or polycrystalline silicon chip to askSilicon is an important semiconductor material, chemical element symbol Si, the silicon used in the electronic industry should have high purity and excellent electrical and mechanical properties. Silicon is one of the largest and most widely used semiconductor materials, and its output and consumption mark the level of a country's electronics industry. In the research and production, silicon materials and silicon devices promote each other. In the Second World War, the use of silicon to produce high-frequency radar crystal detector. The purity of silicon is very low and not single crystal. In 1950, the first silicon transistor was developed to improve the interest of preparing high quality single crystal silicon. Czochralski silicon (CZ) was successfully used in 1952. In 1953, the crucible free zone melting (FZ) method was developed, which can be used for physical purification and single crystal pulling. In 1955, four pure silicon was produced by zinc reduction method, but it could not meet the requirement of manufacturing transistor. In 1956 of hydrogen reduction method of trichlorosilane. The amount of impurities in silicon and after a period of exploration after hydrogen reduction of trichlorosilane method has become a kind of main method.
Q:Why do you use a concentrated sulfuric acid and hydrogen peroxide to wash silicon?
But it is best not to use, the use of water under normal conditions and these two kinds of things can be caustic clean silicon, 100% recycled mortar is not the problem, but this requires tens of thousands of cost and appropriate design, I am clean
Q:The production of silicon units do front-line production workers harmful to the body
The two stage is the most important process of production silicon ingot and slicing stage in the production process, GT ingot furnace and HCT slicing machine are relatively closed production, metallurgy, nonferrous metal, chemical industry, harm can be ignored
Q:How many watts can a piece of silicon produce
The content of silicon in the earth's crust is 25.8%, which provides an inexhaustible source for the production of monocrystalline silicon. Because silicon is one of the most abundant elements in the earth, the solar battery that destined to enter the mass market (mass market) products, reserves of advantage is to become one of the reasons the main photovoltaic silicon materials.
Q:Ultrasonic cleaning cleaning silicon?
3, the silicon wafer cleaning is very important in semiconductor manufacturing process, and the cleaning plate is the most difficult of all cleaning process. Due to the use of silicon ultrasonic cleaning machine, penetration through the physical, the pollution particles from the wafer surface, through mechanical and chemical corrosion of ultrasonic cleaning, the final removal of pollution particles, reached the purpose of wafer cleaning.
Q:After cutting a few chips, mortar density is getting lower and lower
PEG water absorption is very strong, as long as the air humidity is slightly higher, then did not cut the water content of a mortar on the rise, as well as the viscosity of mortar and mortar temperature is related to the temperature difference, the viscosity of mortar to a difference of about 10
Q:The purpose and means of chemical etching of silicon wafers?
After slicing and grinding, the surface of silicon wafer has a layer of damage and pollution due to processing stress
Q:Geometric parameters and testing of silicon wafer
Monocrystalline silicon chip has side length 125mm, 156mm, and 125 of the large diagonal diagonal 156mm and small chamfer diagonal 165mm,Polycrystalline silicon chip to the side of the main 156mm, diagonal 219.2mm.Wafer inspection the main test items are: side, diagonal, chamfer, thickness, TTV, line, chipping, cracks, warping, oil, resistivity, lifetime.
Q:How to convert photovoltaic silicon MW
1MW=100 myriabit125*125 film general single chip 2.3W--2.8W156*156 film general single chip 3.6W-4.2WSilicon chip number =100W divided by Monolithic Power
Q:Seeking for the video: manual insert silicon wafer single crystal insert method
To solve the finger print is very simple, as long as the requirements of employees can not in the whole process of operation of the silicon bare hand contact can be, no debris is not possible, but to see the machine or man-made debris or before the procedure is cracked as, if it is man-made debris, to do a a standard specification, as long as the control that would reduce the rate of fragmentation. Or artificial debris to staff assessment, but also meet the results. I used to track debris for a long time, when all of the pieces are controlled by the descendants of the debris is very low. The main road is the most hidden crack. If the semi automatic equipment under normal circumstances will not produce debris, such as automatic equipment, such as degumming equipment will produce debris, mainly the spray pressure is too large, but the pressure is also very little fragmentation of the right. I think the main thing is to see if you have asked the staff how to do it, followed by the implementation of your employees are required. You can look at these lines on the line!

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