4W B Grade 156*156mm Polycrystalline Solar Cell

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4W B Grade 156*156mm Polycrystalline Solar Cell

Solar Module Summarize

Solar Module is the core part of solar PV power systems,also is the highest value part of it. The function of Solor Module is to convert the sun's radiation to electrical energy, or transfer it to battery and store in it, or to drive the load running.
The Product has been widely used in space and ground, it mainly used for power generation systems, charging systems, road lighting and traffic signs areas. It could offer a wide range of power and voltage, and with high conversion efficiency, and long service life.

Main Characteristic

Long Service Life
High Efficiency Solar Cells
Special Aluminum Frame Design
High Transmission, Low Iron Tempered Glass
Advanced Cell Encapsulation

APPLICATIONS
Solar power stations
Rural electrification, Small home power systems
Power supply for traffic, security, gas industry
12V and 24V battery charging system
Other industrial and commercial application
 

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4W B Grade 156*156mm Polycrystalline Solar Cell

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4W B Grade 156*156mm Polycrystalline Solar Cell

 

4W B Grade 156*156mm Polycrystalline Solar Cell

 

Warranties

6Inch 2BB  Polycrystalline Multi Solar Cells Mono Solar Cell

For c-Si panel: 25years output warranty for no less than 80% of performance, 10 years output warranty for no less than  90% of performance. Free from material and workmanship defects within 5 years.

For a-Si panel: 20 years output warranty for no less than 80% of performance, 10 years output warranty for no less than 90% of performance. Free from material and workmanship defects within 2 years.

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Q:The relationship between the weight and the power of solar wafers!
The thickness of the silicon wafer is unchanged and the weight is unchanged:156*156,8 inch polycrystalline silicon chip efficiency reached 16%, single-chip power of 3.89W.This can be pushed: the thickness of the silicon wafer is 180, the efficiency is up to 16%, and the consumption of the single silicon is 3.89w*7g/w=27.23g.When the thickness of silicon wafer is 180, and the weight of silicon wafer is unchanged, the conversion rate of polycrystalline silicon chip is up to 18%, and the chip power is 156*156*0.18/1000=4.38WThis can be pushed: the thickness of the silicon wafer is 180, the weight of the silicon wafer is unchanged, and the conversion rate of the polycrystalline silicon sheet is up to 18%, and the polysilicon consumption per watt is 27.23/4.38=6.2g
Q:What is a silicon wafer cutting edge material?
Because the cutting edge material particles have very sharp edges, and the hardness is far greater than the silicon rod or silicon ingot hardness, so the silicon rod or silicon ingot and steel wire contact area gradually by the cutting edge material particle grinding off, so as to achieve the purpose of cutting.
Q:Who is the best silicon chip dryer?
Heating oil bath furnace and electric heating two ways, our company is now used in the two, it should be said that each has its advantages and disadvantages
Q:I would like to ask the solar cell (silicon) production process is the principle of how
Three, diffusion systemSolar cells require a large area of PN junction to achieve the conversion of light energy to electrical energy, while the diffusion furnace is a special equipment for manufacturing solar cell PN junction. Tube type diffusion furnace is mainly composed of quartz boat download four parts part, gas chamber, a furnace body part and a holder part etc.. Generally, the liquid source of three phosphorus oxychloride is used as the diffusion source. The P type silicon wafer is placed in a quartz tube of a tube type diffusion furnace, and three nitrogen oxychloride is used in the quartz vessel at the temperature of 850---900 degrees Celsius, and the phosphorus atom is obtained through the reaction of the phosphorus oxychloride and the silicon wafer through the reaction of the phosphorus and the phosphorus. After a certain time, the phosphorus atom from the surrounding surface layer into a silicon wafer, and wafer to internal diffusion through the void between the silicon atoms, forming a N type semiconductor and P type semiconductor interface, namely PN junction. The PN junction made by this method has good uniformity, the uniformity of box resistance is less than ten percent, and the lifetime of less than 10ms. The manufacture of PN junction is the most basic and most important process in the production of solar cells. Because it is the formation of PN junction, so that the electrons and holes in the flow is no longer back to the original place, so that the formation of the current, using the wire will lead to the current, dc.
Q:How to extract silicon from silicon wafers
Annealing: double position hot oxidation furnace after nitrogen purging, infrared heating to 300~500 DEG C, silicon wafer surface and oxygen react, so that the surface of silicon dioxide protection layer.
Q:There is a micro structure on the side of the silicon wafer
For solar cells destined to enter the market market (mass) products, the advantages of reserves is also one of the main reasons for the silicon photovoltaic materials.
Q:What are the raw materials of silicon wafers
Silicon transistorSemiconductor materials can be divided into silicon and germanium transistors. According to the polarity of the transistor can be divided into germanium NPN transistor, germanium PNP transistor, silicon NPN transistor and silicon PNP transistor.
Q:I grew Ag particles on a silicon wafer, about a few hundred nanometers in size
Alcohol is usually placed inside, with ultrasonic cleaning instrument scattered about, the purpose is to make the particles do not reunite together.
Q:What is a silicon wafer
Si seed a specific crystal orientation (seeds, usually a small ingot) rod inserted into the molten state under Si, and slowly pull up the crystal and a seed crystal and the same column to be produced by controlling the process variables to pull the speed to control the crystal column the diameter can be cut into a crystal column. The small lot, wafer was produced. Crystal column ends can not be cut into available wafer parts can be called the head tail. Preliminary cutting out the wafer, usually can not be used as a rough surface, wafer production, and usually in the subsequent process of polishing, polishing the noun to which. According to the different requirements of wafer fabrication, usually need to rough within wafer doping some impurities, such as P, B etc.
Q:How do we use the scanning electron microscope
Most of the samples prepared by silicon wafer were dispersed on the surface of silicon wafer after the dispersion of nano particles. The test results and this kind of sample is silicon pretreatment, the main drying and sample dispersion and sample, the majority of small particle size, easy to agglomerate, take the solution can take the middle or upper clear liquid

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